TY  - JOUR
U1  - Zeitschriftenartikel, wissenschaftlich - begutachtet (reviewed)
A1  - Neuper, Felix
A1  - Chandresh, Abhinav
A1  - Singaraju, Surya Abhishek
A1  - Aghassi-Hagmann, Jasmin
A1  - Hahn, Horst
A1  - Breitung, Ben
T1  - Tailoring Threshold Voltages of Printed Electrolyte-Gated Field-Effect Transistors by Chromium Doping of Indium Oxide Channels
JF  - ACS Omega
N2  - Printed systems spark immense interest in industry, and for several parts such as solar cells or radio frequency identification antennas, printed products are already available on the market. This has led to intense research; however, printed field-effect transistors (FETs) and logics derived thereof still have not been sufficiently developed to be adapted by industry. Among others, one of the reasons for this is the lack of control of the threshold voltage during production. In this work, we show an approach to adjust the threshold voltage (Vth) in printed electrolyte-gated FETs (EGFETs) with high accuracy by doping indium-oxide semiconducting channels with chromium. Despite high doping concentrations achieved by a wet chemical process during precursor ink preparation, good on/off-ratios of more than five orders of magnitude could be demonstrated. The synthesis process is simple, inexpensive, and easily scalable and leads to depletion-mode EGFETs, which are fully functional at operation potentials below 2 V and allows us to increase Vth by approximately 0.5 V.
Y1  - 2019
SN  - 2470-1343
SS  - 2470-1343
U6  - https://doi.org/10.1021/acsomega.9b02513
DO  - https://doi.org/10.1021/acsomega.9b02513
VL  - 4
IS  - 24
SP  - 20579
EP  - 20585
PB  - ACS Publications
CY  - Washington DC
ER  -