@article{SingarajuBabyNeuperetal.2019,
  author    = {Surya Abhishek Singaraju and Tessy T. Baby and Felix Neuper and Robert Kruk and Jasmin Aghassi-Hagmann and Horst Hahn and Ben Breitung},
  title     = {Development of Fully Printed Oxide Field-Effect Transistors using Graphene Passive Structures},
  series   = {ACS Applied Electronic Materials},
  volume    = {1},
  number    = {8},
  publisher = {ACS Publications},
  address   = {Washington DC},
  organization    = {American Chemical Society},
  issn      = {2637-6113},
  doi       = {10.1021/acsaelm.9b00313},
  pages     = {1538 -- 1544},
  year      = {2019},
  abstract  = {During the past decade to the present time, the topic of printed electronics has gained a lot of attention for their potential use in a number of practical applications, including biosensors, photovoltaic devices, RFIDs, flexible displays, large-area circuits, and so on. To fully realize printed electronic components and devices, effective techniques for the printing of passive structures and electrically and chemically compatible materials in the printed devices need to be developed first. The opportunity of using electrically conducting graphene inks will enable the integration of passive structures into active devices, as for example, printed electrolyte-gated transistors (EGTs). Accordingly, in this study, we present the parametric results obtained on fully printed electrolyte-gated transistors having graphene as the passive electrodes, an inorganic oxide semiconductor as the active channel, and a composite solid polymer electrolyte (CSPE) as the gate insulating material. This configuration offers high chemical and electrical stability while at the same time allowing EGT operation at low potentials, implying the distinct advantage of operation at low input voltages. The printed in-plane EGTs we developed exhibit excellent performance with device mobility up to 16 cm2 V–1 s–1, an ION/IOFF ratio of 105, and a subthreshold slope of 120 mV dec–1.},
  language  = {en}
}