TY  - JOUR
U1  - Zeitschriftenartikel, wissenschaftlich - begutachtet (reviewed)
A1  - Feng, Xiaowei
A1  - Punckt, Christian
A1  - Cadilha Marques, Gabriel
A1  - Hefenbrock, Michael
A1  - Tahoori, Mehdi Baradaran
A1  - Aghassi-Hagmann, Jasmin
T1  - Impact of Intrinsic Capacitances on the Dynamic Performance of Printed Electrolyte-Gated Inorganic Field Effect Transistors
JF  - IEEE Transactions on Electron Devices
N2  - Electrolyte-gated, printed field-effect transistors exhibit high charge carrier densities in the channel and thus high on-currents at low operating voltages, allowing for the low-power operation of such devices. This behavior is due to the high area-specific capacitance of the device, in which the electrolyte takes the role of the dielectric layer of classical architectures. In this paper, we investigate intrinsic double-layer capacitances of ink-jet printed electrolyte-gated inorganic field-effect transistors in both in-plane and top-gate architectures by means of voltage-dependent impedance spectroscopy. By comparison with deembedding structures, we separate the intrinsic properties of the double-layer capacitance at the transistor channel from parasitic effects and deduce accurate estimates for the double-layer capacitance based on an equivalent circuit fitting. Based on these results, we have performed simulations of the electrolyte cutoff frequency as a function of electrolyte and gate resistances, showing that the top-gate architecture has the potential to reach the kilohertz regime with proper optimization of materials and printing process. Our findings additionally enable accurate modeling of the frequency-dependent capacitance of electrolyte/ion gel-gated devices as required in the small-signal analysis in the circuit simulation.
Y1  - 2019
SN  - 0018-9383 (Print)
SS  - 0018-9383 (Print)
SN  - 1557-9646 (Online)
SS  - 1557-9646 (Online)
U6  - https://doi.org/10.1109/TED.2019.2919933
DO  - https://doi.org/10.1109/TED.2019.2919933
VL  - 66
IS  - 8
SP  - 3365
EP  - 3370
ER  -