TY - JOUR U1 - Zeitschriftenartikel, wissenschaftlich - begutachtet (reviewed) A1 - Jeong, Jaehoon A1 - Singaraju, Surya Abhishek A1 - Aghassi-Hagmann, Jasmin A1 - Hahn, Horst A1 - Breitung, Ben T1 - Adhesive Ion‐Gel as Gate Insulator of Electrolyte‐Gated Transistors JF - ChemElectroChem N2 - In this study, a facile method to fabricate a cohesive ion‐gel based gate insulator for electrolyte‐gated transistors is introduced. The adhesive and flexible ion‐gel can be laminated easily on the semiconducting channel and electrode manually by hand. The ion‐gel is synthesized by a straightforward technique without complex procedures and shows a remarkable ionic conductivity of 4.8 mS cm−1 at room temperature. When used as a gate insulator in electrolyte‐gated transistors (EGTs), an on/off current ratio of 2.24×104 and a subthreshold swing of 117 mV dec−1 can be achieved. This performance is roughly equivalent to that of ink drop‐casted ion‐gels in electrolyte‐gated transistors, indicating that the film‐attachment method might represent a valuable alternative to ink drop‐casting for the fabrication of gate insulators. Y1 - 2020 SN - 2196-0216 SS - 2196-0216 U6 - https://doi.org/10.1002/celc.202000305 DO - https://doi.org/10.1002/celc.202000305 VL - 7 IS - 13 SP - 2735 EP - 2739 PB - Wiley-VCH Verlag GmbH & Co. KGaA ER -