@article{FengPuncktCadilhaMarquesetal.2019,
  author    = {Xiaowei Feng and Christian Punckt and Gabriel Cadilha Marques and Michael Hefenbrock and Mehdi Baradaran Tahoori and Jasmin Aghassi-Hagmann},
  title     = {Impact of Intrinsic Capacitances on the Dynamic Performance of Printed Electrolyte-Gated Inorganic Field Effect Transistors},
  series   = {IEEE Transactions on Electron Devices},
  volume    = {66},
  number    = {8},
  organization    = {IEEE},
  issn      = {0018-9383 (Print)},
  doi       = {10.1109/TED.2019.2919933},
  pages     = {3365 -- 3370},
  year      = {2019},
  abstract  = {Electrolyte-gated, printed field-effect transistors exhibit high charge carrier densities in the channel and thus high on-currents at low operating voltages, allowing for the low-power operation of such devices. This behavior is due to the high area-specific capacitance of the device, in which the electrolyte takes the role of the dielectric layer of classical architectures. In this paper, we investigate intrinsic double-layer capacitances of ink-jet printed electrolyte-gated inorganic field-effect transistors in both in-plane and top-gate architectures by means of voltage-dependent impedance spectroscopy. By comparison with deembedding structures, we separate the intrinsic properties of the double-layer capacitance at the transistor channel from parasitic effects and deduce accurate estimates for the double-layer capacitance based on an equivalent circuit fitting. Based on these results, we have performed simulations of the electrolyte cutoff frequency as a function of electrolyte and gate resistances, showing that the top-gate architecture has the potential to reach the kilohertz regime with proper optimization of materials and printing process. Our findings additionally enable accurate modeling of the frequency-dependent capacitance of electrolyte/ion gel-gated devices as required in the small-signal analysis in the circuit simulation.},
  language  = {en}
}