@article{UlianovaRasheedBolatetal.2020, author = {Veronika Ulianova and Farhan Rasheed and Sami Bolat and Galo Torres Sevilla and Yurii Didenko and Xiaowei Feng and Ivan Shorubalko and Dominik Bachmann and Dmytro Tatarchuk and Mehdi Baradaran Tahoori and Jasmin Aghassi-Hagmann and Yaroslav Romanyuk}, title = {Fabrication, Characterization and Simulation of Sputtered Pt/In-Ga-Zn-O Schottky Diodes for Low-Frequency Half-Wave Rectifier Circuit}, series = {IEEE Access}, volume = {8}, organization = {IEEE}, issn = {2169-3536}, doi = {10.1109/ACCESS.2020.3002267}, pages = {111783 -- 111790}, year = {2020}, abstract = {Amorphous In-Ga-Zn-O (IGZO) is a high-mobility semiconductor employed in modern thin-film transistors for displays and it is considered as a promising material for Schottky diode-based rectifiers. Properties of the electronic components based on IGZO strongly depend on the manufacturing parameters such as the oxygen partial pressure during IGZO sputtering and post-deposition thermal annealing. In this study, we investigate the combined effect of sputtering conditions of amorphous IGZO (In:Ga:Zn=1:1:1) and post-deposition thermal annealing on the properties of vertical thin-film Pt-IGZO-Cu Schottky diodes, and evaluated the applicability of the fabricated Schottky diodes for low-frequency half-wave rectifier circuits. The change of the oxygen content in the gas mixture from 1.64\% to 6.25\%, and post-deposition annealing is shown to increase the current rectification ratio from 10 5 to 10 7 at ±1 V, Schottky barrier height from 0.64 eV to 0.75 eV, and the ideality factor from 1.11 to 1.39. Half-wave rectifier circuits based on the fabricated Schottky diodes were simulated using parameters extracted from measured current-voltage and capacitance-voltage characteristics. The half-wave rectifier circuits were realized at 100 kHz and 300 kHz on as-fabricated Schottky diodes with active area of 200 μm × 200 μm, which is relevant for the near-field communication (125 kHz - 134 kHz), and provided the output voltage amplitude of 0.87 V for 2 V supply voltage. The simulation results matched with the measurement data, verifying the model accuracy for circuit level simulation.}, language = {en} }