TY  - JOUR
U1  - Zeitschriftenartikel, wissenschaftlich - nicht begutachtet (unreviewed)
A1  - Cadilha Marques, Gabriel
A1  - Garlapati, Suresh Kumar
A1  - Chatterjee, Debaditya
A1  - Dehm, Simone
A1  - Dasgupta, Subho
A1  - Aghassi-Hagmann, Jasmin
A1  - Tahoori, Mehdi Baradaran
T1  - Electrolyte-Gated Field-Effect Transistors Based on Oxide Semiconductors: Fabrication and Modeling
T2  - IEEE Transactions of Electron Devices
KW  - Transistortechnologie
KW  - Feldeffekt
KW  - Halbleiter
KW  - Electrolyte-gated transistors
KW  - oxide semiconductors
KW  - printed electronics
KW  - transistor model
Y1  - 2017
SN  - 0018-9383 (Print)
SS  - 0018-9383 (Print)
SN  - 1557-9646 (Online)
SS  - 1557-9646 (Online)
U6  - https://doi.org/10.1109/TED.2016.2621777
DO  - https://doi.org/10.1109/TED.2016.2621777
VL  - 64
IS  - 1
SP  - 279
EP  - 285
ER  -