TY  - CHAP
U1  - Konferenzveröffentlichung
A1  - Cadilha Marques, Gabriel
A1  - Garlapati, Suresh Kumar
A1  - Dehm, Simone
A1  - Dasgupta, Subho
A1  - Aghassi-Hagmann, Jasmin
A1  - Tahoori, Mehdi Baradaran
T1  - Compact modeling of inkjet printed, high mobility, electrolyte-gated transistors
T2  - Tagungsband zum Workshop der Multiprojekt-Chip-Gruppe Baden-Württemberg
N2  - High mobility, electrolyte-gated transistors (EGTs) show high DC performance at low voltages (< 2 V). To model those EGTs, we have used different models for the below and the above threshold regime with appropriate interpolation to ensure continuity and smoothness over all regimes. This empirical model matches very well with our measured results obtained by the electrical characterization of EGTs.
KW  - Transistor
Y1  - 2016
UR  - https://nbn-resolving.org/urn:nbn:de:bsz:ofb1-opus4-60396
SN  - 1868-9221
SS  - 1868-9221
VL  - 55
SP  - 29
EP  - 33
ER  -