TY  - JOUR
U1  - Zeitschriftenartikel, wissenschaftlich - begutachtet (reviewed)
A1  - Feng, Xiaowei
A1  - Scholz, Alexander
A1  - Tahoori, Mehdi Baradaran
A1  - Aghassi-Hagmann, Jasmin
T1  - An Inkjet-Printed Full-Wave Rectifier for Low-Voltage Operation Using Electrolyte-Gated Indium-Oxide Thin-Film Transistors
JF  - IEEE Transactions on Electron Devices
N2  - Rectifiersare vital electronic circuits for signal and power conversion in various smart sensor applications. The ability to process low input voltage levels, for example, from vibrational energy harvesters is a major challenge with existing passive rectifiers in printed electronics, stemming mainly from the built-in potential of the diode's p-njunction. To address this problem, in this work, we design, fabricate, and characterize an inkjet-printed full-wave rectifier using diode-connected electrolyte-gated thin-film transistors (EGTs). Using both experimental and simulation approaches, we investigate how the rectifier can benefit from the near-zero threshold voltage of transistors, which can be enabled by proper channel geometry setting in EGT technology. The presented circuit can be operated at 1-V input voltage, featuring a remarkably small voltage loss of 140 mV and a cutoff frequency of ~300 Hz. Below the cutoff frequency, more than 2.6-μW dc power is obtained over the load resistances ranging from 5 to 20 kQ. Furthermore, experiments show that the circuit can work with an input amplitude down to 500 mV. This feature makes the presented design highly suitable for a variety of energy-harvesting applications.
Y1  - 2020
SN  - 0018-9383 (Print)
SS  - 0018-9383 (Print)
SN  - 0096-2430 (Online)
SS  - 0096-2430 (Online)
U6  - https://doi.org/10.1109/TED.2020.3020288
DO  - https://doi.org/10.1109/TED.2020.3020288
VL  - 67
IS  - 11
SP  - 4918
EP  - 4923
ER  -