TY - JOUR U1 - Zeitschriftenartikel, wissenschaftlich - begutachtet (reviewed) A1 - Neuper, Felix A1 - Cadilha Marques, Gabriel A1 - Singaraju, Surya Abhishek A1 - Kruk, Robert A1 - Aghassi-Hagmann, Jasmin A1 - Hahn, Horst A1 - Breitung, Ben T1 - ALD-Derived, Low-Density Alumina as Solid Electrolyte in Printed Low-Voltage FETs JF - IEEE Transactions on Electron Devices N2 - In this report, we have studied field-effect transistors (FETs) using low-density alumina for electrolytic gating. Device layers have been prepared starting from the structured ITO glasses by printing the In 2 O 3 channels, low-temperature atomic layer deposition (ALD) of alumina (Al 2 O 3 ), and printing graphene top gates. The transistor performance could be deliberately changed by alternating the ambient humidity; furthermore, ID,ON/ID,OFF-ratios of up to seven orders of magnitude and threshold voltages between 0.66 and 0.43 V, decreasing with an increasing relative humidity between 40% and 90%, could be achieved. In contrast to the common usage of Al 2 O 3 as the dielectric in the FETs, our devices show electrolyte-typegating behavior. This is a result from the formation of protons on the Al 2 O 3 surfaces at higher humidities. Due to the very high local capacitances of the Helmholtz double layers at the channel surfaces, the operation voltage can be as low as 1 V. At low humidities (≤30%), the solid electrolyte dries out and the performance breaks down; however, it can fully reversibly be regained upon a humidity increase. Using ALD-derived alumina as solid electrolyte gating material, thus, allows low-voltage operation and provides a chemically stable gating material while maintaining low process temperatures. However, it has proven to be highly humidity-dependent in its performance. Y1 - 2020 SN - 0018-9383 (Print) SS - 0018-9383 (Print) SN - 0096-2430 (Online) SS - 0096-2430 (Online) U6 - https://doi.org/10.1109/TED.2020.3005624 DO - https://doi.org/10.1109/TED.2020.3005624 VL - 67 IS - 9 SP - 3828 EP - 3833 ER -