@article{CadilhaMarquesSukuramsyahArnalRusetal.2020,
  author    = {Gabriel Cadilha Marques and Adrianus Matthew Sukuramsyah and August Arnal Rus and Sami Bolat and Abdessalem Aribia and Xiaowei Feng and Surya Abhishek Singaraju and Eloi Ramon and Yaroslav Romanyuk and Mehdi Baradaran Tahoori and Jasmin Aghassi-Hagmann},
  title     = {Fabrication and Modeling of pn-Diodes Based on Inkjet-Printed Oxide Semiconductors},
  series   = {IEEE Electron Device Letters},
  volume    = {41},
  number    = {1},
  organization    = {IEEE},
  issn      = {0741-3106 (Print)},
  doi       = {10.1109/LED.2019.2956346},
  pages     = {187 -- 190},
  year      = {2020},
  abstract  = {Oxide semiconductors have the potential to increase the performance of inkjet printed microelectronic devices such as field-effect transistors (FETs), due to their high electron mobilities. Typical metal oxides are n-type semiconductors, while p-type oxides, although realizable, exhibit lower carriermobilities. Therefore, the circuit design based on oxide semiconductors is mostly in n-type logic only. Here we present an inkjet printed pn-diode based on p- and n-type oxide semiconductors.Copper oxide or nickel oxide is used as p-typesemiconductor whereas n-typesemiconductor is realized with indium oxide. Themeasurements show that the pn-diodes operate in the voltage window typical for printed electronics and the emission coefficient is 1.505 and 2.199 for the copper oxide based and nickel oxidebased pn-diode, respectively.Furthermore, a pn-diode model is developed and integrable into a circuit simulator.},
  language  = {en}
}