TY  - JOUR
U1  - Zeitschriftenartikel, wissenschaftlich - begutachtet (reviewed)
A1  - Cadilha Marques, Gabriel
A1  - Sukuramsyah, Adrianus Matthew
A1  - Arnal Rus, August
A1  - Bolat, Sami
A1  - Aribia, Abdessalem
A1  - Feng, Xiaowei
A1  - Singaraju, Surya Abhishek
A1  - Ramon, Eloi
A1  - Romanyuk, Yaroslav
A1  - Tahoori, Mehdi Baradaran
A1  - Aghassi-Hagmann, Jasmin
T1  - Fabrication and Modeling of pn-Diodes Based on Inkjet-Printed Oxide Semiconductors
JF  - IEEE Electron Device Letters
N2  - Oxide semiconductors have the potential to increase the performance of inkjet printed microelectronic devices such as field-effect transistors (FETs), due to their high electron mobilities. Typical metal oxides are n-type semiconductors, while p-type oxides, although realizable, exhibit lower carriermobilities. Therefore, the circuit design based on oxide semiconductors is mostly in n-type logic only. Here we present an inkjet printed pn-diode based on p- and n-type oxide semiconductors.Copper oxide or nickel oxide is used as p-typesemiconductor whereas n-typesemiconductor is realized with indium oxide. Themeasurements show that the pn-diodes operate in the voltage window typical for printed electronics and the emission coefficient is 1.505 and 2.199 for the copper oxide based and nickel oxidebased pn-diode, respectively.Furthermore, a pn-diode model is developed and integrable into a circuit simulator.
KW  - printed electronics
KW  - oxide electronics
KW  - pn-diode
KW  - diode modeling
KW  - indium oxide
KW  - copper oxide
KW  - nickel oxide
Y1  - 2020
SN  - 0741-3106 (Print)
SS  - 0741-3106 (Print)
SN  - 1558-0563 (Online)
SS  - 1558-0563 (Online)
U6  - https://doi.org/10.1109/LED.2019.2956346
DO  - https://doi.org/10.1109/LED.2019.2956346
VL  - 41
IS  - 1
SP  - 187
EP  - 190
ER  -