TY  - JOUR
U1  - Zeitschriftenartikel, wissenschaftlich - begutachtet (reviewed)
A1  - Cadilha Marques, Gabriel
A1  - von Seggern, Falk
A1  - Dehm, Simone
A1  - Breitung, Ben
A1  - Hahn, Horst
A1  - Dasgupta, Subho
A1  - Tahoori, Mehdi Baradaran
A1  - Aghassi-Hagmann, Jasmin
T1  - Influence of Humidity on the Performance of Electrolyte-Gated Transistors and Circuits
JF  - IEEE Transactions on Electron Devices
N2  - In the domain of printed electronics (PE), field-effect transistors (FETs) with an oxide semiconductor channel are very promising. In particular, the use of high gate-capacitance of the composite solid polymer electrolytes (CSPEs) as a gate-insulator ensures extremely low voltage requirements. Besides high gate capacitance, such CSPEs are proven to be easily printable, stable in air over wide temperature ranges, and possess high ion conductivity. These CSPEs can be sensitive to moisture, especially for high surface-to-volume ratio printed thin films. In this paper, we provide a comprehensive experimental study on the effect of humidity on CSPE-gated single transistors. At the circuit level, the performance of ring oscillators (ROs) has been compared for various humidity conditions. The experimental results of the electrolyte-gated FETs (EGFETs) demonstrate rather comparable currents between 30%-90% humidity levels. However, the shifted transistor parameters lead to a significant performance change of the RO frequency behavior. The study in this paper shows the need of an impermeable encapsulation for the CSPE-gated FETs to ensure identical performance at all humidity conditions.
Y1  - 2019
SN  - 0018-9383 (Print)
SS  - 0018-9383 (Print)
SN  - 1557-9646 (Online)
SS  - 1557-9646 (Online)
U6  - https://doi.org/10.1109/TED.2019.2903456
DO  - https://doi.org/10.1109/TED.2019.2903456
VL  - 66
IS  - 5
SP  - 2202
EP  - 2207
ER  -