@article{FengCadilhaMarquesRasheedetal.2019,
  author    = {Xiaowei Feng and Gabriel Cadilha Marques and Farhan Rasheed and Mehdi Baradaran Tahoori and Jasmin Aghassi-Hagmann},
  title     = {Nonquasi-Static Capacitance Modeling and Characterization for Printed Inorganic Electrolyte-Gated Transistors in Logic Gates},
  series   = {IEEE Transactions on Electron Devices},
  volume    = {66},
  number    = {12},
  organization    = {IEEE},
  issn      = {1557-9646 (Online)},
  doi       = {10.1109/TED.2019.2947787},
  pages     = {5272 -- 5277},
  year      = {2019},
  abstract  = {Printed electronics can benefit from the deployment of electrolytesas gate insulators,which enables a high gate capacitance per unit area (1–10 μFcm−2) due to the formation of electrical double layers (EDLs). Consequently, electrolyte-gated field-effect transistors (EGFETs) attain high-charge carrier densities already in the subvoltage regime, allowing for low-voltage operation of circuits and systems. This article presents a systematic study of lumped terminal capacitances of printed electrolyte-gated transistors under various dc bias conditions. We perform voltage-dependent impedancemeasurements and separate extrinsic components from the lumped terminal capacitance. The proposed Meyer-like capacitance model, which also accounts for the nonquasi-static (NQS) effect, agrees well with experimental data. Finally, to verify the model, we implement it in Verilog-A and simulate the transient response of an inverter and a ring oscillator circuit. Simulation results are in good agreement with the measurement data of fabricated devices.},
  language  = {en}
}