TY  - JOUR
U1  - Zeitschriftenartikel, wissenschaftlich - begutachtet (reviewed)
A1  - Feng, Xiaowei
A1  - Cadilha Marques, Gabriel
A1  - Rasheed, Farhan
A1  - Tahoori, Mehdi Baradaran
A1  - Aghassi-Hagmann, Jasmin
T1  - Nonquasi-Static Capacitance Modeling and Characterization for Printed Inorganic Electrolyte-Gated Transistors in Logic Gates
JF  - IEEE Transactions on Electron Devices
N2  - Printed electronics can benefit from the deployment of electrolytesas gate insulators,which enables a high gate capacitance per unit area (1–10 μFcm−2) due to the formation of electrical double layers (EDLs). Consequently, electrolyte-gated field-effect transistors (EGFETs) attain high-charge carrier densities already in the subvoltage regime, allowing for low-voltage operation of circuits and systems. This article presents a systematic study of lumped terminal capacitances of printed electrolyte-gated transistors under various dc bias conditions. We perform voltage-dependent impedancemeasurements and separate extrinsic components from the lumped terminal capacitance.
The proposed Meyer-like capacitance model, which also accounts for the nonquasi-static (NQS) effect, agrees well with experimental data. Finally, to verify the model, we implement it in Verilog-A and simulate the transient response of an inverter and a ring oscillator circuit. Simulation results are in good agreement with the measurement data of fabricated devices.
Y1  - 2019
SN  - 1557-9646 (Online)
SS  - 1557-9646 (Online)
SN  - 0018-9383 (Print)
SS  - 0018-9383 (Print)
U6  - https://doi.org/10.1109/TED.2019.2947787
DO  - https://doi.org/10.1109/TED.2019.2947787
VL  - 66
IS  - 12
SP  - 5272
EP  - 5277
ER  -