@article{CadilhaMarquesvonSeggernDehmetal.2019,
  author    = {Gabriel Cadilha Marques and Falk von Seggern and Simone Dehm and Ben Breitung and Horst Hahn and Subho Dasgupta and Mehdi Baradaran Tahoori and Jasmin Aghassi-Hagmann},
  title     = {Influence of Humidity on the Performance of Electrolyte-Gated Transistors and Circuits},
  series   = {IEEE Transactions on Electron Devices},
  volume    = {66},
  number    = {5},
  organization    = {IEEE},
  issn      = {0018-9383 (Print)},
  doi       = {10.1109/TED.2019.2903456},
  pages     = {2202 -- 2207},
  year      = {2019},
  abstract  = {In the domain of printed electronics (PE), field-effect transistors (FETs) with an oxide semiconductor channel are very promising. In particular, the use of high gate-capacitance of the composite solid polymer electrolytes (CSPEs) as a gate-insulator ensures extremely low voltage requirements. Besides high gate capacitance, such CSPEs are proven to be easily printable, stable in air over wide temperature ranges, and possess high ion conductivity. These CSPEs can be sensitive to moisture, especially for high surface-to-volume ratio printed thin films. In this paper, we provide a comprehensive experimental study on the effect of humidity on CSPE-gated single transistors. At the circuit level, the performance of ring oscillators (ROs) has been compared for various humidity conditions. The experimental results of the electrolyte-gated FETs (EGFETs) demonstrate rather comparable currents between 30\%-90\% humidity levels. However, the shifted transistor parameters lead to a significant performance change of the RO frequency behavior. The study in this paper shows the need of an impermeable encapsulation for the CSPE-gated FETs to ensure identical performance at all humidity conditions.},
  language  = {en}
}