TY  - JOUR
U1  - Zeitschriftenartikel, wissenschaftlich - begutachtet (reviewed)
A1  - Singaraju, Surya Abhishek
A1  - Baby, Tessy T.
A1  - Neuper, Felix
A1  - Kruk, Robert
A1  - Aghassi-Hagmann, Jasmin
A1  - Hahn, Horst
A1  - Breitung, Ben
T1  - Development of Fully Printed Oxide Field-Effect Transistors using Graphene Passive Structures
JF  - ACS Applied Electronic Materials
N2  - During the past decade to the present time, the topic of printed electronics has gained a lot of attention for their potential use in a number of practical applications, including biosensors, photovoltaic devices, RFIDs, flexible displays, large-area circuits, and so on. To fully realize printed electronic components and devices, effective techniques for the printing of passive structures and electrically and chemically compatible materials in the printed devices need to be developed first. The opportunity of using electrically conducting graphene inks will enable the integration of passive structures into active devices, as for example, printed electrolyte-gated transistors (EGTs). Accordingly, in this study, we present the parametric results obtained on fully printed electrolyte-gated transistors having graphene as the passive electrodes, an inorganic oxide semiconductor as the active channel, and a composite solid polymer electrolyte (CSPE) as the gate insulating material. This configuration offers high chemical and electrical stability while at the same time allowing EGT operation at low potentials, implying the distinct advantage of operation at low input voltages. The printed in-plane EGTs we developed exhibit excellent performance with device mobility up to 16 cm2 V–1 s–1, an ION/IOFF ratio of 105, and a subthreshold slope of 120 mV dec–1.
Y1  - 2019
SN  - 2637-6113
SS  - 2637-6113
U6  - https://doi.org/10.1021/acsaelm.9b00313
DO  - https://doi.org/10.1021/acsaelm.9b00313
VL  - 1
IS  - 8
SP  - 1538
EP  - 1544
PB  - ACS Publications
CY  - Washington DC
ER  -