@inproceedings{Cadilha MarquesGarlapatiDehmetal.2016,
  author    = {Cadilha Marques, Gabriel and Garlapati, Suresh Kumar and Dehm, Simone and Dasgupta, Subho and Aghassi-Hagmann, Jasmin and Tahoori, Mehdi Baradaran},
  title     = {Compact modeling of inkjet printed, high mobility, electrolyte-gated transistors},
  booktitle = {Tagungsband zum Workshop der Multiprojekt-Chip-Gruppe Baden-W{\"u}rttemberg},
  volume    = {55},
  organization    = {Hochschule Ulm},
  issn      = {1868-9221},
  url       = {https://nbn-resolving.org/urn:nbn:de:bsz:ofb1-opus4-60396},
  institution = {Fakult{\"a}t Elektrotechnik und Informationstechnik (E+I) (bis 03/2019)},
  pages     = {29 -- 33},
  year      = {2016},
  abstract  = {High mobility, electrolyte-gated transistors (EGTs) show high DC performance at low voltages (< 2 V). To model those EGTs, we have used different models for the below and the above threshold regime with appropriate interpolation to ensure continuity and smoothness over all regimes. This empirical model matches very well with our measured results obtained by the electrical characterization of EGTs.},
  language  = {en}
}