@article{JeongSingarajuAghassi-Hagmannetal.2020,
  author    = {Jeong, Jaehoon and Singaraju, Surya Abhishek and Aghassi-Hagmann, Jasmin and Hahn, Horst and Breitung, Ben},
  title     = {Adhesive Ion-Gel as Gate Insulator of Electrolyte-Gated Transistors},
  journal   = {ChemElectroChem},
  volume    = {7},
  number    = {13},
  issn      = {2196-0216},
  doi       = {10.1002/celc.202000305},
  institution = {Fakult{\"a}t Elektrotechnik, Medizintechnik und Informatik (EMI) (ab 04/2019)},
  pages     = {2735 -- 2739},
  year      = {2020},
  abstract  = {In this study, a facile method to fabricate a cohesive ion-gel based gate insulator for electrolyte-gated transistors is introduced. The adhesive and flexible ion-gel can be laminated easily on the semiconducting channel and electrode manually by hand. The ion-gel is synthesized by a straightforward technique without complex procedures and shows a remarkable ionic conductivity of 4.8 mS cm-1 at room temperature. When used as a gate insulator in electrolyte-gated transistors (EGTs), an on/off current ratio of 2.24×104 and a subthreshold swing of 117 mV dec-1 can be achieved. This performance is roughly equivalent to that of ink drop-casted ion-gels in electrolyte-gated transistors, indicating that the film-attachment method might represent a valuable alternative to ink drop-casting for the fabrication of gate insulators.},
  language  = {en}
}