High performance printed oxide field-effect transistors processed using photonic curing

  • Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low processOxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low process temperatures and short exposure time and thereby, high throughput compatibility. Here, using dissimilar photonic curing concepts (UV–visible light and UV-laser), we demonstrate facile fabrication of high performance In2O3 field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance p-type semiconductors, which can be bypassed using unipolar logics from high mobility n-type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability.show moreshow less

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Author:Suresh Kumar Garlapati, Gabriel Cadilha Marques, Julia Susanne Gebauer, Simone Dehm, Michael Bruns, Markus Winterer, Mehdi Baradaran Tahoori, Jasmin Aghassi-Hagmann, Horst Hahn, Subho Dasgupta
Place of publication:Bristol
Year of Publication:2018
Pagenumber:7
Language:English
Parent Title (English):Nanotechnology
Volume:29
Issue:23
ISSN:0957-4484
First Page:235205
Document Type:Article (reviewed)
Institutes:Hochschule Offenburg / Bibliografie
Acces Right:Zugriffsbeschränkt
Release Date:2019/01/10
Licence (German):License LogoEs gilt das UrhG
DOI:https://doi.org/10.1088/1361-6528/aab7a2
Pubmed Id:http://www.ncbi.nlm.nih.gov/pubmed?term=29553481