A Smooth EKV-Based DC Model for Accurate Simulation of Printed Transistors and Their Process Variations

  • A printed electronics technology has the advantage of additive and extremely low-cost fabrication compared with the conventional silicon technology. Specifically, printed electrolyte-gated field-effect transistors (EGFETs) are attractive for low-cost applications in the Internet-of-Things domain as they can operate at low supply voltages. In this paper, we propose an empirical dc model for EGFETs,A printed electronics technology has the advantage of additive and extremely low-cost fabrication compared with the conventional silicon technology. Specifically, printed electrolyte-gated field-effect transistors (EGFETs) are attractive for low-cost applications in the Internet-of-Things domain as they can operate at low supply voltages. In this paper, we propose an empirical dc model for EGFETs, which can describe the behavior of the EGFETs smoothly and accurately over all regimes. The proposed model, built by extending the Enz-Krummenacher-Vittoz model, can also be used to model process variations, which was not possible previously due to fixed parameters for near threshold regime. It offers a single model for all the operating regions of the transistors with only one equation for the drain current. Additionally, it models the transistors with a less number of parameters but higher accuracy compared with existing techniques. Measurement results from several fabricated EGFETs confirm that the proposed model can predict the I-V more accurately compared with the state-of-the-art models in all operating regions. Additionally, the measurements on the frequency of a fabricated ring oscillator are only 4.7% different from the simulation results based on the proposed model using values for the switching capacitances extracted from measurement data, which shows more than 2× improvement compared with the state-of-the-art model.show moreshow less

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Metadaten
Author:Farhan Rasheed, Mohammad Saber Golanbari, Gabriel Cadilha Marques, Mehdi Baradaran Tahoori, Jasmin Aghassi-Hagmann
Contributing Corporation:IEEE
Publisher:IEEE
Year of Publication:2018
Language:English
Parent Title (English):IEEE Transactions on Electron Devices
Volume:65
Issue:2
ISSN:0018-9383
First Page:667
Last Page:673
Document Type:Article (reviewed)
Institutes:Hochschule Offenburg / Bibliografie
Acces Right:Frei zugänglich
Release Date:2019/01/10
Licence (German):License LogoEs gilt das UrhG
DOI:https://doi.org/10.1109/TED.2017.2786160