Tailoring Threshold Voltages of Printed Electrolyte-Gated Field-Effect Transistors by Chromium Doping of Indium Oxide Channels

  • Printed systems spark immense interest in industry, and for several parts such as solar cells or radio frequency identification antennas, printed products are already available on the market. This has led to intense research; however, printed field-effect transistors (FETs) and logics derived thereof still have not been sufficiently developed to be adapted by industry. Among others, one of thePrinted systems spark immense interest in industry, and for several parts such as solar cells or radio frequency identification antennas, printed products are already available on the market. This has led to intense research; however, printed field-effect transistors (FETs) and logics derived thereof still have not been sufficiently developed to be adapted by industry. Among others, one of the reasons for this is the lack of control of the threshold voltage during production. In this work, we show an approach to adjust the threshold voltage (Vth) in printed electrolyte-gated FETs (EGFETs) with high accuracy by doping indium-oxide semiconducting channels with chromium. Despite high doping concentrations achieved by a wet chemical process during precursor ink preparation, good on/off-ratios of more than five orders of magnitude could be demonstrated. The synthesis process is simple, inexpensive, and easily scalable and leads to depletion-mode EGFETs, which are fully functional at operation potentials below 2 V and allows us to increase Vth by approximately 0.5 V.show moreshow less

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Metadaten
Author:Felix Neuper, Abhinav Chandresh, Surya Abhishek Singaraju, Jasmin Aghassi-HagmannORCiDGND, Horst Hahn, Ben Breitung
Creating Corporation:American Chemical Society
Publisher:ACS Publications
Place of publication:Washington DC
Year of Publication:2019
Language:English
Parent Title (English):ACS Omega
Volume:4
Issue:24
ISSN:2470-1343
First Page:20579
Last Page:20585
Document Type:Article (reviewed)
Institutes:Hochschule Offenburg / Bibliografie
Acces Right:Frei zugänglich
Release Date:2020/01/23
Licence (German):License LogoCreative Commons - CC BY-NC-ND - Namensnennung - Nicht kommerziell - Keine Bearbeitungen 4.0 International
DOI:https://doi.org/10.1021/acsomega.9b02513