Impact of Intrinsic Capacitances on the Dynamic Performance of Printed Electrolyte-Gated Inorganic Field Effect Transistors

  • Electrolyte-gated, printed field-effect transistors exhibit high charge carrier densities in the channel and thus high on-currents at low operating voltages, allowing for the low-power operation of such devices. This behavior is due to the high area-specific capacitance of the device, in which the electrolyte takes the role of the dielectric layer of classical architectures. In this paper, weElectrolyte-gated, printed field-effect transistors exhibit high charge carrier densities in the channel and thus high on-currents at low operating voltages, allowing for the low-power operation of such devices. This behavior is due to the high area-specific capacitance of the device, in which the electrolyte takes the role of the dielectric layer of classical architectures. In this paper, we investigate intrinsic double-layer capacitances of ink-jet printed electrolyte-gated inorganic field-effect transistors in both in-plane and top-gate architectures by means of voltage-dependent impedance spectroscopy. By comparison with deembedding structures, we separate the intrinsic properties of the double-layer capacitance at the transistor channel from parasitic effects and deduce accurate estimates for the double-layer capacitance based on an equivalent circuit fitting. Based on these results, we have performed simulations of the electrolyte cutoff frequency as a function of electrolyte and gate resistances, showing that the top-gate architecture has the potential to reach the kilohertz regime with proper optimization of materials and printing process. Our findings additionally enable accurate modeling of the frequency-dependent capacitance of electrolyte/ion gel-gated devices as required in the small-signal analysis in the circuit simulation.‚Ķshow moreshow less

Export metadata

Additional Services

Share in Twitter Search Google Scholar
Metadaten
Author:Xiaowei Feng, Christian Punckt, Gabriel Cadilha Marques, Michael Hefenbrock, Mehdi Baradaran Tahoori, Jasmin Aghassi-HagmannORCiDGND
Creating Corporation:IEEE
Year of Publication:2019
Language:English
Parent Title (English):IEEE Transactions on Electron Devices
Volume:66
Issue:8
ISSN:0018-9383 (Print)
ISSN:1557-9646 (Online)
First Page:3365
Last Page:3370
Document Type:Article (reviewed)
Institutes:Hochschule Offenburg / Bibliografie
Acces Right:Zugriffsbeschränkt
Release Date:2020/01/23
Licence (German):License LogoEs gilt das UrhG
DOI:https://doi.org/10.1109/TED.2019.2919933