Influence of Humidity on the Performance of Electrolyte-Gated Transistors and Circuits

  • In the domain of printed electronics (PE), field-effect transistors (FETs) with an oxide semiconductor channel are very promising. In particular, the use of high gate-capacitance of the composite solid polymer electrolytes (CSPEs) as a gate-insulator ensures extremely low voltage requirements. Besides high gate capacitance, such CSPEs are proven to be easily printable, stable in air over wideIn the domain of printed electronics (PE), field-effect transistors (FETs) with an oxide semiconductor channel are very promising. In particular, the use of high gate-capacitance of the composite solid polymer electrolytes (CSPEs) as a gate-insulator ensures extremely low voltage requirements. Besides high gate capacitance, such CSPEs are proven to be easily printable, stable in air over wide temperature ranges, and possess high ion conductivity. These CSPEs can be sensitive to moisture, especially for high surface-to-volume ratio printed thin films. In this paper, we provide a comprehensive experimental study on the effect of humidity on CSPE-gated single transistors. At the circuit level, the performance of ring oscillators (ROs) has been compared for various humidity conditions. The experimental results of the electrolyte-gated FETs (EGFETs) demonstrate rather comparable currents between 30%-90% humidity levels. However, the shifted transistor parameters lead to a significant performance change of the RO frequency behavior. The study in this paper shows the need of an impermeable encapsulation for the CSPE-gated FETs to ensure identical performance at all humidity conditions.‚Ķshow moreshow less

Export metadata

Additional Services

Share in Twitter Search Google Scholar
Metadaten
Author:Gabriel Cadilha Marques, Falk von Seggern, Simone Dehm, Ben Breitung, Horst Hahn, Subho Dasgupta, Mehdi Baradaran Tahoori, Jasmin Aghassi-HagmannORCiDGND
Creating Corporation:IEEE
Year of Publication:2019
Language:English
Parent Title (English):IEEE Transactions on Electron Devices
Volume:66
Issue:5
ISSN:0018-9383 (Print)
ISSN:1557-9646 (Online)
First Page:2202
Last Page:2207
Document Type:Article (reviewed)
Institutes:Hochschule Offenburg / Bibliografie
Acces Right:Zugriffsbeschränkt
Release Date:2020/01/23
Licence (German):License LogoEs gilt das UrhG
DOI:https://doi.org/10.1109/TED.2019.2903456