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Electrolyte-Gated Field-Effect Transistors Based on Oxide Semiconductors: Fabrication and Modeling

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Metadaten
Document Type:Article (unreviewed)
Zitierlink: https://opus.hs-offenburg.de/2167
Bibliografische Angaben
Title (English):Electrolyte-Gated Field-Effect Transistors Based on Oxide Semiconductors: Fabrication and Modeling
Author:Gabriel Cadilha Marques, Suresh Kumar Garlapati, Debaditya Chatterjee, Simone Dehm, Subho Dasgupta, Jasmin Aghassi-HagmannStaff MemberORCiDGND, Mehdi Baradaran Tahoori
Year of Publication:2017
First Page:279
Last Page:285
Parent Title (English):IEEE Transactions of Electron Devices
Volume:64
Issue:1
ISSN:0018-9383 (Print)
ISSN:1557-9646 (Online)
DOI:https://doi.org/10.1109/TED.2016.2621777
Language:English
Inhaltliche Informationen
Institutes:Fakultät Elektrotechnik und Informationstechnik (E+I) (bis 03/2019)
Institutes:Bibliografie
Tag:Feldeffekt; Halbleiter; Transistortechnologie
Electrolyte-gated transistors; oxide semiconductors; printed electronics; transistor model
Formale Angaben
Open Access: Closed Access 
Licence (German):License LogoUrheberrechtlich geschützt
Opac ID:Link zum Online-Katalog