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Compact modeling of inkjet printed, high mobility, electrolyte-gated transistors

  • High mobility, electrolyte-gated transistors (EGTs) show high DC performance at low voltages (< 2 V). To model those EGTs, we have used different models for the below and the above threshold regime with appropriate interpolation to ensure continuity and smoothness over all regimes. This empirical model matches very well with our measured results obtained by the electrical characterization of EGTs.High mobility, electrolyte-gated transistors (EGTs) show high DC performance at low voltages (< 2 V). To model those EGTs, we have used different models for the below and the above threshold regime with appropriate interpolation to ensure continuity and smoothness over all regimes. This empirical model matches very well with our measured results obtained by the electrical characterization of EGTs.show moreshow less

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Metadaten
Document Type:Conference Proceeding
Conference Type:Konferenzartikel
Zitierlink: https://opus.hs-offenburg.de/2290
Bibliografische Angaben
Title (English):Compact modeling of inkjet printed, high mobility, electrolyte-gated transistors
Conference:55. Workshop der Multiprojekt-Chip-Gruppe Baden-Württemberg, Karlsruhe, 5. Februar 2016
Author:Gabriel Cadilha Marques, Suresh Kumar Garlapati, Simone Dehm, Subho Dasgupta, Jasmin Aghassi-HagmannStaff MemberORCiDGND, Mehdi Baradaran Tahoori
Year of Publication:2016
Creating Corporation:Hochschule Karlsruhe
First Page:29
Last Page:33
Parent Title (German):Tagungsband zum Workshop der Multiprojekt-Chip-Gruppe Baden-Württemberg
Volume:55
ISSN:1868-9221
URL:https://nbn-resolving.org/urn:nbn:de:bsz:ofb1-opus4-60396
Language:English
Inhaltliche Informationen
Institutes:Fakultät Elektrotechnik und Informationstechnik (E+I) (bis 03/2019)
Institutes:Bibliografie
Journals:Tagungsband zum Workshop der Multiprojekt Chip-Gruppe Baden-Württemberg
Tag:Transistor
Formale Angaben
Open Access: Open Access 
 Bronze 
Licence (German):License LogoUrheberrechtlich geschützt
SWB-ID:885558677