ALD-Derived, Low-Density Alumina as Solid Electrolyte in Printed Low-Voltage FETs
- In this report, we have studied field-effect transistors (FETs) using low-density alumina for electrolytic gating. Device layers have been prepared starting from the structured ITO glasses by printing the In 2 O 3 channels, low-temperature atomic layer deposition (ALD) of alumina (Al 2 O 3 ), and printing graphene top gates. The transistor performance could be deliberately changed by alternatingIn this report, we have studied field-effect transistors (FETs) using low-density alumina for electrolytic gating. Device layers have been prepared starting from the structured ITO glasses by printing the In 2 O 3 channels, low-temperature atomic layer deposition (ALD) of alumina (Al 2 O 3 ), and printing graphene top gates. The transistor performance could be deliberately changed by alternating the ambient humidity; furthermore, ID,ON/ID,OFF-ratios of up to seven orders of magnitude and threshold voltages between 0.66 and 0.43 V, decreasing with an increasing relative humidity between 40% and 90%, could be achieved. In contrast to the common usage of Al 2 O 3 as the dielectric in the FETs, our devices show electrolyte-typegating behavior. This is a result from the formation of protons on the Al 2 O 3 surfaces at higher humidities. Due to the very high local capacitances of the Helmholtz double layers at the channel surfaces, the operation voltage can be as low as 1 V. At low humidities (≤30%), the solid electrolyte dries out and the performance breaks down; however, it can fully reversibly be regained upon a humidity increase. Using ALD-derived alumina as solid electrolyte gating material, thus, allows low-voltage operation and provides a chemically stable gating material while maintaining low process temperatures. However, it has proven to be highly humidity-dependent in its performance.…
Document Type: | Article (reviewed) |
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Zitierlink: | https://opus.hs-offenburg.de/4339 | Bibliografische Angaben |
Title (English): | ALD-Derived, Low-Density Alumina as Solid Electrolyte in Printed Low-Voltage FETs |
Author: | Felix Neuper, Gabriel Cadilha Marques, Surya Abhishek Singaraju, Robert Kruk, Jasmin Aghassi-HagmannORCiDGND, Horst Hahn, Ben Breitung |
Year of Publication: | 2020 |
Creating Corporation: | IEEE |
First Page: | 3828 |
Last Page: | 3833 |
Parent Title (English): | IEEE Transactions on Electron Devices |
Volume: | 67 |
Issue: | 9 |
ISSN: | 0018-9383 (Print) |
ISSN: | 0096-2430 (Online) |
DOI: | https://doi.org/10.1109/TED.2020.3005624 |
Language: | English | Inhaltliche Informationen |
Institutes: | Fakultät Elektrotechnik, Medizintechnik und Informatik (EMI) (ab 04/2019) |
Institutes: | Bibliografie | Formale Angaben |
Open Access: | Closed Access |
Licence (German): | Urheberrechtlich geschützt |