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Adhesive Ion‐Gel as Gate Insulator of Electrolyte‐Gated Transistors

  • In this study, a facile method to fabricate a cohesive ion‐gel based gate insulator for electrolyte‐gated transistors is introduced. The adhesive and flexible ion‐gel can be laminated easily on the semiconducting channel and electrode manually by hand. The ion‐gel is synthesized by a straightforward technique without complex procedures and shows a remarkable ionic conductivity of 4.8 mS cm−1 atIn this study, a facile method to fabricate a cohesive ion‐gel based gate insulator for electrolyte‐gated transistors is introduced. The adhesive and flexible ion‐gel can be laminated easily on the semiconducting channel and electrode manually by hand. The ion‐gel is synthesized by a straightforward technique without complex procedures and shows a remarkable ionic conductivity of 4.8 mS cm−1 at room temperature. When used as a gate insulator in electrolyte‐gated transistors (EGTs), an on/off current ratio of 2.24×104 and a subthreshold swing of 117 mV dec−1 can be achieved. This performance is roughly equivalent to that of ink drop‐casted ion‐gels in electrolyte‐gated transistors, indicating that the film‐attachment method might represent a valuable alternative to ink drop‐casting for the fabrication of gate insulators.show moreshow less

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Metadaten
Author:Jaehoon Jeong, Surya Abhishek Singaraju, Jasmin Aghassi-HagmannORCiDGND, Horst Hahn, Ben Breitung
Publisher:Wiley-VCH Verlag GmbH & Co. KGaA
Year of Publication:2020
Language:English
Parent Title (English):ChemElectroChem
Volume:7
Issue:13
ISSN:2196-0216
First Page:2735
Last Page:2739
Document Type:Article (reviewed)
Open Access:Frei zugänglich
Institutes:Bibliografie
Release Date:2020/12/11
Licence (German):License LogoCreative Commons - CC BY - Namensnennung 4.0 International
DOI:https://doi.org/10.1002/celc.202000305