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ALD-Derived, Low-Density Alumina as Solid Electrolyte in Printed Low-Voltage FETs

  • In this report, we have studied field-effect transistors (FETs) using low-density alumina for electrolytic gating. Device layers have been prepared starting from the structured ITO glasses by printing the In 2 O 3 channels, low-temperature atomic layer deposition (ALD) of alumina (Al 2 O 3 ), and printing graphene top gates. The transistor performance could be deliberately changed by alternatingIn this report, we have studied field-effect transistors (FETs) using low-density alumina for electrolytic gating. Device layers have been prepared starting from the structured ITO glasses by printing the In 2 O 3 channels, low-temperature atomic layer deposition (ALD) of alumina (Al 2 O 3 ), and printing graphene top gates. The transistor performance could be deliberately changed by alternating the ambient humidity; furthermore, ID,ON/ID,OFF-ratios of up to seven orders of magnitude and threshold voltages between 0.66 and 0.43 V, decreasing with an increasing relative humidity between 40% and 90%, could be achieved. In contrast to the common usage of Al 2 O 3 as the dielectric in the FETs, our devices show electrolyte-typegating behavior. This is a result from the formation of protons on the Al 2 O 3 surfaces at higher humidities. Due to the very high local capacitances of the Helmholtz double layers at the channel surfaces, the operation voltage can be as low as 1 V. At low humidities (≤30%), the solid electrolyte dries out and the performance breaks down; however, it can fully reversibly be regained upon a humidity increase. Using ALD-derived alumina as solid electrolyte gating material, thus, allows low-voltage operation and provides a chemically stable gating material while maintaining low process temperatures. However, it has proven to be highly humidity-dependent in its performance.show moreshow less

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Metadaten
Author:Felix Neuper, Gabriel Cadilha Marques, Surya Abhishek Singaraju, Robert Kruk, Jasmin Aghassi-HagmannORCiDGND, Horst Hahn, Ben Breitung
Creating Corporation:IEEE
Year of Publication:2020
Language:English
Parent Title (English):IEEE Transactions on Electron Devices
Volume:67
Issue:9
ISSN:0018-9383 (Print)
ISSN:0096-2430 (Online)
First Page:3828
Last Page:3833
Document Type:Article (reviewed)
Institutes:Bibliografie
Open Access:Zugriffsbeschränkt
Release Date:2020/12/11
Licence (German):License LogoEs gilt das UrhG
DOI:https://doi.org/10.1109/TED.2020.3005624