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Fabrication, Characterization and Simulation of Sputtered Pt/In-Ga-Zn-O Schottky Diodes for Low-Frequency Half-Wave Rectifier Circuit

  • Amorphous In-Ga-Zn-O (IGZO) is a high-mobility semiconductor employed in modern thin-film transistors for displays and it is considered as a promising material for Schottky diode-based rectifiers. Properties of the electronic components based on IGZO strongly depend on the manufacturing parameters such as the oxygen partial pressure during IGZO sputtering and post-deposition thermal annealing. InAmorphous In-Ga-Zn-O (IGZO) is a high-mobility semiconductor employed in modern thin-film transistors for displays and it is considered as a promising material for Schottky diode-based rectifiers. Properties of the electronic components based on IGZO strongly depend on the manufacturing parameters such as the oxygen partial pressure during IGZO sputtering and post-deposition thermal annealing. In this study, we investigate the combined effect of sputtering conditions of amorphous IGZO (In:Ga:Zn=1:1:1) and post-deposition thermal annealing on the properties of vertical thin-film Pt-IGZO-Cu Schottky diodes, and evaluated the applicability of the fabricated Schottky diodes for low-frequency half-wave rectifier circuits. The change of the oxygen content in the gas mixture from 1.64% to 6.25%, and post-deposition annealing is shown to increase the current rectification ratio from 10 5 to 10 7 at ±1 V, Schottky barrier height from 0.64 eV to 0.75 eV, and the ideality factor from 1.11 to 1.39. Half-wave rectifier circuits based on the fabricated Schottky diodes were simulated using parameters extracted from measured current-voltage and capacitance-voltage characteristics. The half-wave rectifier circuits were realized at 100 kHz and 300 kHz on as-fabricated Schottky diodes with active area of 200 μm × 200 μm, which is relevant for the near-field communication (125 kHz - 134 kHz), and provided the output voltage amplitude of 0.87 V for 2 V supply voltage. The simulation results matched with the measurement data, verifying the model accuracy for circuit level simulation.show moreshow less

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Metadaten
Author:Veronika Ulianova, Farhan Rasheed, Sami Bolat, Galo Torres Sevilla, Yurii Didenko, Xiaowei Feng, Ivan Shorubalko, Dominik Bachmann, Dmytro Tatarchuk, Mehdi Baradaran Tahoori, Jasmin Aghassi-HagmannORCiDGND, Yaroslav Romanyuk
Creating Corporation:IEEE
Year of Publication:2020
Language:English
Parent Title (English):IEEE Access
Volume:8
ISSN:2169-3536
First Page:111783
Last Page:111790
Document Type:Article (reviewed)
Institutes:Bibliografie
Open Access:Zugriffsbeschränkt
Release Date:2020/12/14
Licence (German):License LogoCreative Commons - CC BY - Namensnennung 4.0 International
DOI:https://doi.org/10.1109/ACCESS.2020.3002267