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Fabrication and Modeling of pn-Diodes Based on Inkjet-Printed Oxide Semiconductors

  • Oxide semiconductors have the potential to increase the performance of inkjet printed microelectronic devices such as field-effect transistors (FETs), due to their high electron mobilities. Typical metal oxides are n-type semiconductors, while p-type oxides, although realizable, exhibit lower carriermobilities. Therefore, the circuit design based on oxide semiconductors is mostly in n-type logicOxide semiconductors have the potential to increase the performance of inkjet printed microelectronic devices such as field-effect transistors (FETs), due to their high electron mobilities. Typical metal oxides are n-type semiconductors, while p-type oxides, although realizable, exhibit lower carriermobilities. Therefore, the circuit design based on oxide semiconductors is mostly in n-type logic only. Here we present an inkjet printed pn-diode based on p- and n-type oxide semiconductors.Copper oxide or nickel oxide is used as p-typesemiconductor whereas n-typesemiconductor is realized with indium oxide. Themeasurements show that the pn-diodes operate in the voltage window typical for printed electronics and the emission coefficient is 1.505 and 2.199 for the copper oxide based and nickel oxidebased pn-diode, respectively.Furthermore, a pn-diode model is developed and integrable into a circuit simulator.‚Ķshow moreshow less

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Metadaten
Author:Gabriel Cadilha Marques, Adrianus Matthew Sukuramsyah, August Arnal Rus, Sami Bolat, Abdessalem Aribia, Xiaowei Feng, Surya Abhishek Singaraju, Eloi Ramon, Yaroslav Romanyuk, Mehdi Baradaran Tahoori, Jasmin Aghassi-HagmannORCiDGND
Creating Corporation:IEEE
Year of Publication:2020
Language:English
Tag:copper oxide; diode modeling; indium oxide; nickel oxide; oxide electronics; pn-diode; printed electronics
Parent Title (English):IEEE Electron Device Letters
Volume:41
Issue:1
ISSN:0741-3106 (Print)
ISSN:1558-0563 (Online)
First Page:187
Last Page:190
Document Type:Article (reviewed)
Institutes:Bibliografie
Open Access:Zugriffsbeschränkt
Release Date:2020/01/23
Licence (German):License LogoEs gilt das UrhG
DOI:https://doi.org/10.1109/LED.2019.2956346