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High performance printed oxide field-effect transistors processed using photonic curing

  • Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low processOxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low process temperatures and short exposure time and thereby, high throughput compatibility. Here, using dissimilar photonic curing concepts (UV–visible light and UV-laser), we demonstrate facile fabrication of high performance In2O3 field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance p-type semiconductors, which can be bypassed using unipolar logics from high mobility n-type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability.show moreshow less

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Metadaten
Document Type:Article (reviewed)
Zitierlink: https://opus.hs-offenburg.de/3158
Bibliografische Angaben
Title (English):High performance printed oxide field-effect transistors processed using photonic curing
Author:Suresh Kumar Garlapati, Gabriel Cadilha Marques, Julia Susanne Gebauer, Simone Dehm, Michael Bruns, Markus Winterer, Mehdi Baradaran Tahoori, Jasmin Aghassi-HagmannStaff MemberORCiDGND, Horst Hahn, Subho Dasgupta
Year of Publication:2018
Place of publication:Bristol
Page Number:7
First Page:235205
Parent Title (English):Nanotechnology
Volume:29
Issue:23
ISSN:0957-4484
DOI:https://doi.org/10.1088/1361-6528/aab7a2
Language:English
Inhaltliche Informationen
Institutes:Fakultät Elektrotechnik und Informationstechnik (E+I) (bis 03/2019)
Institutes:Bibliografie
Formale Angaben
Open Access: Closed Access 
Licence (German):License LogoUrheberrechtlich geschützt