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ALD-Derived, Low-Density Alumina as Solid Electrolyte in Printed Low-Voltage FETs

  • In this report, we have studied field-effect transistors (FETs) using low-density alumina for electrolytic gating. Device layers have been prepared starting from the structured ITO glasses by printing the In 2 O 3 channels, low-temperature atomic layer deposition (ALD) of alumina (Al 2 O 3 ), and printing graphene top gates. The transistor performance could be deliberately changed by alternatingIn this report, we have studied field-effect transistors (FETs) using low-density alumina for electrolytic gating. Device layers have been prepared starting from the structured ITO glasses by printing the In 2 O 3 channels, low-temperature atomic layer deposition (ALD) of alumina (Al 2 O 3 ), and printing graphene top gates. The transistor performance could be deliberately changed by alternating the ambient humidity; furthermore, ID,ON/ID,OFF-ratios of up to seven orders of magnitude and threshold voltages between 0.66 and 0.43 V, decreasing with an increasing relative humidity between 40% and 90%, could be achieved. In contrast to the common usage of Al 2 O 3 as the dielectric in the FETs, our devices show electrolyte-typegating behavior. This is a result from the formation of protons on the Al 2 O 3 surfaces at higher humidities. Due to the very high local capacitances of the Helmholtz double layers at the channel surfaces, the operation voltage can be as low as 1 V. At low humidities (≤30%), the solid electrolyte dries out and the performance breaks down; however, it can fully reversibly be regained upon a humidity increase. Using ALD-derived alumina as solid electrolyte gating material, thus, allows low-voltage operation and provides a chemically stable gating material while maintaining low process temperatures. However, it has proven to be highly humidity-dependent in its performance.show moreshow less

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Metadaten
Document Type:Article (reviewed)
Zitierlink: https://opus.hs-offenburg.de/4339
Bibliografische Angaben
Title (English):ALD-Derived, Low-Density Alumina as Solid Electrolyte in Printed Low-Voltage FETs
Author:Felix Neuper, Gabriel Cadilha Marques, Surya Abhishek Singaraju, Robert Kruk, Jasmin Aghassi-HagmannStaff MemberORCiDGND, Horst Hahn, Ben Breitung
Year of Publication:2020
Creating Corporation:IEEE
First Page:3828
Last Page:3833
Parent Title (English):IEEE Transactions on Electron Devices
Volume:67
Issue:9
ISSN:0018-9383 (Print)
ISSN:0096-2430 (Online)
DOI:https://doi.org/10.1109/TED.2020.3005624
Language:English
Inhaltliche Informationen
Institutes:Fakultät Elektrotechnik, Medizintechnik und Informatik (EMI) (ab 04/2019)
Institutes:Bibliografie
Formale Angaben
Open Access: Closed Access 
Licence (German):License LogoUrheberrechtlich geschützt