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Printing Technologies for Integration of Electronic Devices and Sensors

  • Many different methods, such as screen printing, gravure, flexography, inkjet etc., have been employed to print electronic devices. Depending on the type and performance of the devices, processing is done at low or high temperature using precursor- or particle-based inks. As a result of the processing details, devices can be fabricated on flexible or non-flexible substrates, depending on theirMany different methods, such as screen printing, gravure, flexography, inkjet etc., have been employed to print electronic devices. Depending on the type and performance of the devices, processing is done at low or high temperature using precursor- or particle-based inks. As a result of the processing details, devices can be fabricated on flexible or non-flexible substrates, depending on their temperature stability. Furthermore, in order to reduce the operating voltage, printed devices rely on high-capacitance electrolytes rather than on dielectrics. The printing resolution and speed are two of the major challenging parameters for printed electronics. High-resolution printing produces small-size printed devices and high-integration densities with minimum materials consumption. However, most printing methods have resolutions between 20 and 50 μm. Printing resolutions close to 1 μm have also been achieved with optimized process conditions and better printing technology. The final physical dimensions of the devices pose severe limitations on their performance. For example, the channel lengths being of this dimension affect the operating frequency of the thin-film transistors (TFTs), which is inversely proportional to the square of channel length. Consequently, short channels are favorable not only for high-frequency applications but also for high-density integration. The need to reduce this dimension to substantially smaller sizes than those possible with today’s printers can be fulfilled either by developing alternative printing or stamping techniques, or alternative transistor geometries. The development of a polymer pen lithography technique allows scaling up parallel printing of a large number of devices in one step, including the successive printing of different materials. The introduction of an alternative transistor geometry, namely the vertical Field Effect Transistor (vFET), is based on the idea to use the film thickness as the channel length, instead of the lateral dimensions of the printed structure, thus reducing the channel length by orders of magnitude. The improvements in printing technologies and the possibilities offered by nanotechnological approaches can result in unprecedented opportunities for the Internet of Things (IoT) and many other applications. The vision of printing functional materials, and not only colors as in conventional paper printing, is attractive to many researchers and industries because of the added opportunities when using flexible substrates such as polymers and textiles. Additionally, the reduction of costs opens new markets. The range of processing techniques covers laterally-structured and large-area printing technologies, thermal, laser and UV-annealing, as well as bonding techniques, etc. Materials, such as conducting, semiconducting, dielectric and sensing materials, rigid and flexible substrates, protective coating, organic, inorganic and polymeric substances, energy conversion and energy storage materials constitute an enormous challenge in their integration into complex devices.show moreshow less

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Metadaten
Document Type:Conference Proceeding
Conference Type:Konferenzartikel
Zitierlink: https://opus.hs-offenburg.de/7160
Bibliografische Angaben
Title (English):Printing Technologies for Integration of Electronic Devices and Sensors
Conference:NATO Advanced Research Workshop on Functional Nanostructures and Sensors for CBRN Defence and Environmental Safety and Security (May 14-17, 2018 : Chişinău, Moldova)
Author:Tessy T. Baby, Gabriel Cadilha Marques, Felix Neuper, Surya Abhishek Singaraju, Suresh Kumar Garlapati, Falk von Seggern, Robert Kruk, Subho Dasgupta, Benedikt Sykora, Ben Breitung, Parvathy Anitha Sukkurji, Uwe Bog, Ravi Kumar, Harald Fuchs, Timo Reinheimer, Morten Mikolajek, Joachim R. Binder, Michael Hirtz, Martin Ungerer, Liane Koker, Ulrich Gengenbach, Nilesha Mishra, Patric Gruber, Mehdi Baradaran Tahoori, Jasmin Aghassi-HagmannStaff MemberORCiDGND, Heinz von Seggern, Horst Hahn
Year of Publication:2020
Place of publication:Dordrecht
Publisher:Springer
First Page:1
Last Page:34
Parent Title (English):Functional Nanostructures and Sensors for CBRN Defence and Environmental Safety and Security
Editor:Anatolie Sidorenko, Horst Hahn
Volume:NAPSC
ISBN:978-94-024-1908-5 (Hardcover)
ISBN:978-94-024-1911-5 (Softcover)
ISSN:978-94-024-1909-2 (eBook)
ISSN:1874-6519
ISSN:1874-6543 (E-ISSN)
DOI:https://doi.org/10.1007/978-94-024-1909-2_1
Language:English
Inhaltliche Informationen
Institutes:Fakultät Elektrotechnik, Medizintechnik und Informatik (EMI) (ab 04/2019)
Institutes:Bibliografie
Formale Angaben
Open Access: Closed 
Licence (German):License LogoUrheberrechtlich geschützt