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Nonquasi-Static Capacitance Modeling and Characterization for Printed Inorganic Electrolyte-Gated Transistors in Logic Gates

  • Printed electronics can benefit from the deployment of electrolytesas gate insulators,which enables a high gate capacitance per unit area (1–10 μFcm−2) due to the formation of electrical double layers (EDLs). Consequently, electrolyte-gated field-effect transistors (EGFETs) attain high-charge carrier densities already in the subvoltage regime, allowing for low-voltage operation of circuits andPrinted electronics can benefit from the deployment of electrolytesas gate insulators,which enables a high gate capacitance per unit area (1–10 μFcm−2) due to the formation of electrical double layers (EDLs). Consequently, electrolyte-gated field-effect transistors (EGFETs) attain high-charge carrier densities already in the subvoltage regime, allowing for low-voltage operation of circuits and systems. This article presents a systematic study of lumped terminal capacitances of printed electrolyte-gated transistors under various dc bias conditions. We perform voltage-dependent impedancemeasurements and separate extrinsic components from the lumped terminal capacitance. The proposed Meyer-like capacitance model, which also accounts for the nonquasi-static (NQS) effect, agrees well with experimental data. Finally, to verify the model, we implement it in Verilog-A and simulate the transient response of an inverter and a ring oscillator circuit. Simulation results are in good agreement with the measurement data of fabricated devices.show moreshow less

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Metadaten
Author:Xiaowei Feng, Gabriel Cadilha Marques, Farhan Rasheed, Mehdi Baradaran Tahoori, Jasmin Aghassi-HagmannORCiDGND
Creating Corporation:IEEE
Year of Publication:2019
Language:English
Parent Title (English):IEEE Transactions on Electron Devices
Volume:66
Issue:12
ISSN:1557-9646 (Online)
ISSN:0018-9383 (Print)
First Page:5272
Last Page:5277
Document Type:Article (reviewed)
Institutes:Hochschule Offenburg / Bibliografie
Acces Right:Zugriffsbeschränkt
Release Date:2020/01/22
Licence (German):License LogoEs gilt das UrhG
DOI:https://doi.org/10.1109/TED.2019.2947787