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Development of Fully Printed Oxide Field-Effect Transistors using Graphene Passive Structures

  • During the past decade to the present time, the topic of printed electronics has gained a lot of attention for their potential use in a number of practical applications, including biosensors, photovoltaic devices, RFIDs, flexible displays, large-area circuits, and so on. To fully realize printed electronic components and devices, effective techniques for the printing of passive structures andDuring the past decade to the present time, the topic of printed electronics has gained a lot of attention for their potential use in a number of practical applications, including biosensors, photovoltaic devices, RFIDs, flexible displays, large-area circuits, and so on. To fully realize printed electronic components and devices, effective techniques for the printing of passive structures and electrically and chemically compatible materials in the printed devices need to be developed first. The opportunity of using electrically conducting graphene inks will enable the integration of passive structures into active devices, as for example, printed electrolyte-gated transistors (EGTs). Accordingly, in this study, we present the parametric results obtained on fully printed electrolyte-gated transistors having graphene as the passive electrodes, an inorganic oxide semiconductor as the active channel, and a composite solid polymer electrolyte (CSPE) as the gate insulating material. This configuration offers high chemical and electrical stability while at the same time allowing EGT operation at low potentials, implying the distinct advantage of operation at low input voltages. The printed in-plane EGTs we developed exhibit excellent performance with device mobility up to 16 cm2 V–1 s–1, an ION/IOFF ratio of 105, and a subthreshold slope of 120 mV dec–1.show moreshow less

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Metadaten
Author:Surya Abhishek Singaraju, Tessy T. Baby, Felix Neuper, Robert Kruk, Jasmin Aghassi-HagmannORCiDGND, Horst Hahn, Ben Breitung
Creating Corporation:American Chemical Society
Publisher:ACS Publications
Place of publication:Washington DC
Year of Publication:2019
Language:English
Parent Title (English):ACS Applied Electronic Materials
Volume:1
Issue:8
ISSN:2637-6113
First Page:1538
Last Page:1544
Document Type:Article (reviewed)
Institutes:Hochschule Offenburg / Bibliografie
Acces Right:Zugriffsbeschränkt
Release Date:2020/01/23
Licence (German):License LogoEs gilt das UrhG
DOI:https://doi.org/10.1021/acsaelm.9b00313