Electrolyte-Gated Field-Effect Transistors Based on Oxide Semiconductors: Fabrication and Modeling
| Document Type: | Article (unreviewed) |
|---|---|
| Zitierlink: | https://opus.hs-offenburg.de/2167 | Bibliografische Angaben |
| Title (English): | Electrolyte-Gated Field-Effect Transistors Based on Oxide Semiconductors: Fabrication and Modeling |
| Author: | Gabriel Cadilha Marques, Suresh Kumar Garlapati, Debaditya Chatterjee, Simone Dehm, Subho Dasgupta, Jasmin Aghassi-Hagmann ORCiDGND, Mehdi Baradaran Tahoori |
| Year of Publication: | 2017 |
| First Page: | 279 |
| Last Page: | 285 |
| Parent Title (English): | IEEE Transactions of Electron Devices |
| Volume: | 64 |
| Issue: | 1 |
| ISSN: | 0018-9383 (Print) |
| ISSN: | 1557-9646 (Online) |
| DOI: | https://doi.org/10.1109/TED.2016.2621777 |
| Language: | English | Inhaltliche Informationen |
| Institutes: | Fakultät Elektrotechnik und Informationstechnik (E+I) (bis 03/2019) |
| Institutes: | Bibliografie |
| Tag: | Feldeffekt; Halbleiter; Transistortechnologie Electrolyte-gated transistors; oxide semiconductors; printed electronics; transistor model | Formale Angaben |
| Open Access: | Closed Access |
| Licence (German): |  Urheberrechtlich geschützt |
| Opac ID: | Link zum Online-Katalog |