Open Access

Gabriel Cadilha Marques, Adrianus Matthew Sukuramsyah, August Arnal Rus, Sami Bolat, Abdessalem Aribia, Xiaowei Feng, Surya Abhishek Singaraju, Eloi Ramon, Yaroslav Romanyuk, Mehdi Baradaran Tahoori, Jasmin Aghassi-Hagmann

• Oxide semiconductors have the potential to increase the performance of inkjet printed microelectronic devices such as field-effect transistors (FETs), due to their high electron mobilities. Typical metal oxides are n-type semiconductors, while p-type oxides, although realizable, exhibit lower carriermobilities. Therefore, the circuit design based on oxide semiconductors is mostly in n-type logicOxide semiconductors have the potential to increase the performance of inkjet printed microelectronic devices such as field-effect transistors (FETs), due to their high electron mobilities. Typical metal oxides are n-type semiconductors, while p-type oxides, although realizable, exhibit lower carriermobilities. Therefore, the circuit design based on oxide semiconductors is mostly in n-type logic only. Here we present an inkjet printed pn-diode based on p- and n-type oxide semiconductors.Copper oxide or nickel oxide is used as p-typesemiconductor whereas n-typesemiconductor is realized with indium oxide. Themeasurements show that the pn-diodes operate in the voltage window typical for printed electronics and the emission coefficient is 1.505 and 2.199 for the copper oxide based and nickel oxidebased pn-diode, respectively.Furthermore, a pn-diode model is developed and integrable into a circuit simulator.…