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Die Erfindung betrifft eine Vorrichtung zur biologischen Methanisierung von Kohlenstoffdioxid mittels methanogener Mikroorganismen durch Umsetzung von Wasserstoff und Kohlenstoffdioxid die Folgendes aufweist: (a) einen Reaktor; (b) ein in dem Reaktor bereitgestelltes Medium mit methanogenen Mikroorganismen; (c) eine Zuführeinrichtung zum Zuführen eines H2-enthaltenden Gases in das Medium; wobei (d) die Zuführeinrichtung eine Mehrzahl an Gasführungseinheiten umfasst, wobei jede der Gasführungseinheiten eine Mehrzahl an Begasungseinheiten aufweist, die jeweils eine Vielzahl an Auslassöffnungen zum Zuführen des H2-enthaltenden Gases in das Medium aufweist, wobei die Zuführeinrichtung derart ausgestaltet ist, dass das Zuführen des H2-enthaltenden Gases durch sukzessive Beaufschlagung der Gasführungseinheiten erfolgen kann. Weiterhin betrifft die Erfindung auch ein Verfahren zur biologischen Methanisierung von Kohlenstoffdioxid in einer Reaktorvorrichtung mittels methanogener Mikroorganismen als Teil eines in einem Reaktor bereitgestellten Mediums, dadurch gekennzeichnet, dass ein H2-enthaltendes Gas über eine Mehrzahl an Gasführungseinheiten dem Medium zugeführt wird, wobei jede der Gasführungseinheiten eine Mehrzahl an Begasungseinheiten aufweist, die jeweils eine Vielzahl an Auslassöffnungen aufweisen, wobei das Zuführen des H2-enthaltenden Gases durch sukzessive Beaufschlagung der Gasführungseinheiten erfolgt. Dem H2-enthaltenden Medium kann nach Bedarf Kohlenstoffdioxid beigemischt werden.
Die Erfindung betrifft eine Photovoltaik-Stromversorgungsvorrichtung, insbesondere vom öffentlichen Stromnetz unabhängige Photovoltaik-Stromversorgungsvorrichtung, mit einem positiven (204) und einem negativen (206) Lastanschluss für den Anschluss einer elektrischen Last, mit einer Mehrzahl von photovoltaischen Zellen (104) und einer wiederaufladbaren Batterie (5), welche wenigstens zwei in Serie geschaltete Batteriezellen (112) umfasst. Nach der Erfindung sind die photovoltaischen Zellen (104) zu einer der Anzahl der Batteriezellen (112) entsprechenden Anzahl von seriell verbundenen Teilstrings (108) verschaltet und jeder Teilstring (108) ist mit einem positiven Teilstringanschluss mit einem Pluspol und mit einem negativen Teilstringanschluss mit einem Minuspol einer zugeordneten Batteriezelle (112) oder mehreren zugeordneten parallel geschalteten Batteriezellen (112) verbunden. Dabei kann jeder Teilstring (108) zwischen dem positiven und negativen Teilstringanschluss eine maximale Leerlaufspannung erzeugen, die kleiner oder gleich einer vorgegebenen Ladeschlussspannung der zugeordneten Batteriezelle (112) oder der zugeordneten parallel geschalteten Batteriezellen (112) ist. Weiterhin betrifft die Erfindung eine Schaltungsanordnung zum Laden einer wiederaufladbaren Batterie, die zur Realisierung einer derartigen Photovoltaik-Stromversorgungsvorrichtung geeignet ist.
Printed Electronics is perceived to have a major impact in the fields of smart sensors, Internet of Things and wearables. Especially low power printed technologies such as electrolyte gated field effect transistors (EGFETs) using solution-processed inorganic materials and inkjet printing are very promising in such application domains. In this paper, we discuss a modeling approach to describe the variations of printed devices. Incorporating these models and design flows into our previously developed printed design system allows for robust circuit design. Additionally, we propose a reliability-aware routing solution for printed electronics technology based on the technology constraints in printing crossovers. The proposed methodology was validated on multiple benchmark circuits and can be easily integrated with the design automation tools-set.
Printed electrolyte-gated oxide electronics is an emerging electronic technology in the low voltage regime (≤1 V). Whereas in the past mainly dielectrics have been used for gating the transistors, many recent approaches employ the advantages of solution processable, solid polymer electrolytes, or ion gels that provide high gate capacitances produced by a Helmholtz double layer, allowing for low-voltage operation. Herein, with special focus on work performed at KIT recent advances in building electronic circuits based on indium oxide, n-type electrolyte-gated field-effect transistors (EGFETs) are reviewed. When integrated into ring oscillator circuits a digital performance ranging from 250 Hz at 1 V up to 1 kHz is achieved. Sequential circuits such as memory cells are also demonstrated. More complex circuits are feasible but remain challenging also because of the high variability of the printed devices. However, the device inherent variability can be even exploited in security circuits such as physically unclonable functions (PUFs), which output a reliable and unique, device specific, digital response signal. As an overall advantage of the technology all the presented circuits can operate at very low supply voltages (0.6 V), which is crucial for low-power printed electronics applications.
Electrolyte-gated, printed field-effect transistors exhibit high charge carrier densities in the channel and thus high on-currents at low operating voltages, allowing for the low-power operation of such devices. This behavior is due to the high area-specific capacitance of the device, in which the electrolyte takes the role of the dielectric layer of classical architectures. In this paper, we investigate intrinsic double-layer capacitances of ink-jet printed electrolyte-gated inorganic field-effect transistors in both in-plane and top-gate architectures by means of voltage-dependent impedance spectroscopy. By comparison with deembedding structures, we separate the intrinsic properties of the double-layer capacitance at the transistor channel from parasitic effects and deduce accurate estimates for the double-layer capacitance based on an equivalent circuit fitting. Based on these results, we have performed simulations of the electrolyte cutoff frequency as a function of electrolyte and gate resistances, showing that the top-gate architecture has the potential to reach the kilohertz regime with proper optimization of materials and printing process. Our findings additionally enable accurate modeling of the frequency-dependent capacitance of electrolyte/ion gel-gated devices as required in the small-signal analysis in the circuit simulation.
In the domain of printed electronics (PE), field-effect transistors (FETs) with an oxide semiconductor channel are very promising. In particular, the use of high gate-capacitance of the composite solid polymer electrolytes (CSPEs) as a gate-insulator ensures extremely low voltage requirements. Besides high gate capacitance, such CSPEs are proven to be easily printable, stable in air over wide temperature ranges, and possess high ion conductivity. These CSPEs can be sensitive to moisture, especially for high surface-to-volume ratio printed thin films. In this paper, we provide a comprehensive experimental study on the effect of humidity on CSPE-gated single transistors. At the circuit level, the performance of ring oscillators (ROs) has been compared for various humidity conditions. The experimental results of the electrolyte-gated FETs (EGFETs) demonstrate rather comparable currents between 30%-90% humidity levels. However, the shifted transistor parameters lead to a significant performance change of the RO frequency behavior. The study in this paper shows the need of an impermeable encapsulation for the CSPE-gated FETs to ensure identical performance at all humidity conditions.
Die Wörz´sche Heuristik
(2019)
Radio frequency identification (RFID) antennas are popular for high frequency (HF) RFID, energy transfer and near field communication (NFC) applications. Particularly for wireless measurement systems the RFID/NFC technology is a good option to implement a wireless communication interface. In this context, the design of corresponding reader and transmitter antennas plays a major role for achieving suitable transmission quality. This work proves the feasibility of the rapid prototyping of a RFID/NFC antenna, which is used for the wireless communication and energy harvesting at the required frequency of 13.56 MHz. A novel and low-cost direct ink writing (DIW) technology utilizing highly viscous silver nanoparticle ink is used for this process. This paper describes the development and analysis of low-cost printed flexible RFID/NFC antennas on cost-effective substrates for a microelectronic vital parameter measurement system. Furthermore, we compare the measured technical parameters with existing copper-based counterparts on a FR4 substrate.
Smart Home or Smart Building applications are a growing market. An increasing challenge is to design energy efficient Smart Home applications to achieve sustainable and green homes. Using the example of the development of an Indoor Smart Gardening system with wireless monitoring and automated watering this paper is discussing in particular the design issue of energy autonomous working sensors and actuators for home automation. Most important part of the presented Smart Gardening system is a 3D printed smart flower pot for single plants. The smart flower pot has integrated a water reservoir for automated plant irrigation and an electronic for monitoring important plant parameters and the water level of the water reservoir. Energy harvesting with solar cells enables energy autonomous working of the flower pot. A low-power wireless interface also integrated in the flowerpot and an external gateway based on a Raspberry Pi 3 enables wireless networking of multiple of those flower pots. The gateway is used for evaluating the plant parameters and as a user interface. Particularly the architecture of the energy autonomous wireless flower pot will be considered, because fully energy autonomous sensors and actuators for home automation could not be implemented without special concepts for the energy supply and the overall electronic.
Printed electronics can benefit from the deployment of electrolytesas gate insulators,which enables a high gate capacitance per unit area (1–10 μFcm−2) due to the formation of electrical double layers (EDLs). Consequently, electrolyte-gated field-effect transistors (EGFETs) attain high-charge carrier densities already in the subvoltage regime, allowing for low-voltage operation of circuits and systems. This article presents a systematic study of lumped terminal capacitances of printed electrolyte-gated transistors under various dc bias conditions. We perform voltage-dependent impedancemeasurements and separate extrinsic components from the lumped terminal capacitance.
The proposed Meyer-like capacitance model, which also accounts for the nonquasi-static (NQS) effect, agrees well with experimental data. Finally, to verify the model, we implement it in Verilog-A and simulate the transient response of an inverter and a ring oscillator circuit. Simulation results are in good agreement with the measurement data of fabricated devices.