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Structures for interconnecting active microwave semiconductor-devices, e.g. FET's and MIC's, with the electrical surrounding or with each other have to be designed more and more carefully when increasing the desired upper frequency limit. Therefore, several connecting structures for device embedding have been examined. Mainly, their applicability for the frequency range from 10 GHz to 100 GHz was considered. Additionally, different equivalent circuits were developed to approximately describe their behaviour for CAD-applications.
The embedding of microwave devices is treated by applying the finite-difference method to three-dimensional shielded structures. A program package was developed to evaluate electromagnetic fields inside arbitrary transmission-line connecting structures and to compute the scattering matrix. The air bridge, the transition through a wall, and the bond wire are examined as interconnecting structures. Detailed results are given and discussed regarding the fundamental behavior of embedding.