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Bud type carbon nanohorns (CNHs) are composed of carbon and have a closed conical tip at one end protruding from an aggregate structure. By employing a simple oxidation process in CO2 atmosphere, it is possible to open the CNH tips which increases their specific surface area by four fold. These tip opened CNHs combine the microporous nature of activated carbons and the crystalline mesoporous character of carbon nanotubes. The results for the high pressure CO2 gas adsorption of tip opened CNHs are reported herein for the first time and are found to be superior to traditional CO2 adsorbents like zeolites. The modified CNHs are also found to be promising materials for lithium ion batteries and the performance is found to be on a par with carbon nanotubes and carbon nanofibers.
Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low process temperatures and short exposure time and thereby, high throughput compatibility. Here, using dissimilar photonic curing concepts (UV–visible light and UV-laser), we demonstrate facile fabrication of high performance In2O3 field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance p-type semiconductors, which can be bypassed using unipolar logics from high mobility n-type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability.