Open Access

The following contribution deals with the experimental investigation and theoretical evaluation of fatigue crack growth under isothermal and non-isothermal conditions at the nickel alloy 617. The microstructure and mechanical properties of alloy 617 are influenced significantly by the thermal heat treatment and the following thermal exposure in service. Hence, a solution annealed and a long-time service exposed material condition is studied. The crack growth measurement is carried out by using an alternate current potential drop system, which is integrated into a thermomechanical fatigue (TMF) test facility. The measured fatigue crack growth rates results in a function of material condition, temperature and load waveform. Furthermore, the results of the non-isothermal tests depend on the phase between thermal and mechanical load (in-phase, out-of-phase). A fracture mechanic based, time dependent model is upgraded by an approach to consider environmental effects, where almost all model parameters represent directly measureable values. A consistent description of all results and a good correlation with the experimental data can be achieved.

This work discusses several use cases of post-mortem mobile device tracking in which privacy is required e.g. due to client-confidentiality agreements and sensibility of data from government agencies as well as mobile telecommunication providers. We argue that our proposed Bloomfilter based privacy approach is a valuable technical building block for the arising General Data Protection Regulation (GDPR) requirements in this area. In short, we apply a solution based on the Bloom filters data structure that allows a 3rd party to performsome privacy saving setrelations on a mobiletelco’s access logfile or other mobile access logfile from harvesting parties without revealing any other mobile users in the proximity of a mobile base station but still allowing to track perpetrators.

In many application domains, in particular automotives, guaranteeing a very low failure rate is crucial to meet functional and safety standards. Especially, reliable operation of memory components such as SRAM cells is of essential importance. Due to aggressive technology downscaling, process and runtime variations significantly impact manufacturing yield as well as functionality. For this reason, a thorough memory failure rate assessment is imperative for correct circuit operation and yield improvement. In this regard, Monte Carlo simulations have been used as the conventional method to estimate the variability induced failure rate of memory components. However, Monte Carlo methods become infeasible when estimating rare events such as high-sigma failure rates. To this end, Importance Sampling methods have been proposed which reduce the number of required simulations substantially. However, existing methods still suffer from inaccuracies and high computational efforts, in particular for high-sigma problems. In this paper, we fill this gap by presenting an efficient mixture Importance Sampling approach based on Bayesian optimization, which deploys a surface model of the objective function to find the most probable failure points. Its advantages include constant complexity independent of the dimensions of design space, the potential to find the global extrema, and higher trustworthiness of the estimated failure rate by accurately exploring the design space. The approach is evaluated on a 6T-SRAM cell as well as a master-slave latch based on a 28nm FDSOI process. The results show an improvement in accuracy, resulting in up to 63× better accuracy in estimating failure rates compared to the best state-of-the-art solutions on a 28nm technology node.

Printed systems spark immense interest in industry, and for several parts such as solar cells or radio frequency identification antennas, printed products are already available on the market. This has led to intense research; however, printed field-effect transistors (FETs) and logics derived thereof still have not been sufficiently developed to be adapted by industry. Among others, one of the reasons for this is the lack of control of the threshold voltage during production. In this work, we show an approach to adjust the threshold voltage (Vth) in printed electrolyte-gated FETs (EGFETs) with high accuracy by doping indium-oxide semiconducting channels with chromium. Despite high doping concentrations achieved by a wet chemical process during precursor ink preparation, good on/off-ratios of more than five orders of magnitude could be demonstrated. The synthesis process is simple, inexpensive, and easily scalable and leads to depletion-mode EGFETs, which are fully functional at operation potentials below 2 V and allows us to increase Vth by approximately 0.5 V.