Open Access

Modern society is striving for digital connectivity that demands information security. As an emerging technology, printed electronics is a key enabler for novel device types with free form factors, customizability, and the potential for large-area fabrication while being seamlessly integrated into our everyday environment. At present, information security is mainly based on software algorithms that use pseudo random numbers. In this regard, hardware-intrinsic security primitives, such as physical unclonable functions, are very promising to provide inherent security features comparable to biometrical data. Device-specific, random intrinsic variations are exploited to generate unique secure identifiers. Here, we introduce a hybrid physical unclonable function, combining silicon and printed electronics technologies, based on metal oxide thin film devices. Our system exploits the inherent randomness of printed materials due to surface roughness, film morphology and the resulting electrical characteristics. The security primitive provides high intrinsic variation, is non-volatile, scalable and exhibits nearly ideal uniqueness.

Many different methods, such as screen printing, gravure, flexography, inkjet etc., have been employed to print electronic devices. Depending on the type and performance of the devices, processing is done at low or high temperature using precursor- or particle-based inks. As a result of the processing details, devices can be fabricated on flexible or non-flexible substrates, depending on their temperature stability. Furthermore, in order to reduce the operating voltage, printed devices rely on high-capacitance electrolytes rather than on dielectrics. The printing resolution and speed are two of the major challenging parameters for printed electronics. High-resolution printing produces small-size printed devices and high-integration densities with minimum materials consumption. However, most printing methods have resolutions between 20 and 50 μm. Printing resolutions close to 1 μm have also been achieved with optimized process conditions and better printing technology. The final physical dimensions of the devices pose severe limitations on their performance. For example, the channel lengths being of this dimension affect the operating frequency of the thin-film transistors (TFTs), which is inversely proportional to the square of channel length. Consequently, short channels are favorable not only for high-frequency applications but also for high-density integration. The need to reduce this dimension to substantially smaller sizes than those possible with today’s printers can be fulfilled either by developing alternative printing or stamping techniques, or alternative transistor geometries. The development of a polymer pen lithography technique allows scaling up parallel printing of a large number of devices in one step, including the successive printing of different materials. The introduction of an alternative transistor geometry, namely the vertical Field Effect Transistor (vFET), is based on the idea to use the film thickness as the channel length, instead of the lateral dimensions of the printed structure, thus reducing the channel length by orders of magnitude. The improvements in printing technologies and the possibilities offered by nanotechnological approaches can result in unprecedented opportunities for the Internet of Things (IoT) and many other applications. The vision of printing functional materials, and not only colors as in conventional paper printing, is attractive to many researchers and industries because of the added opportunities when using flexible substrates such as polymers and textiles. Additionally, the reduction of costs opens new markets. The range of processing techniques covers laterally-structured and large-area printing technologies, thermal, laser and UV-annealing, as well as bonding techniques, etc. Materials, such as conducting, semiconducting, dielectric and sensing materials, rigid and flexible substrates, protective coating, organic, inorganic and polymeric substances, energy conversion and energy storage materials constitute an enormous challenge in their integration into complex devices.

Rectifiersare vital electronic circuits for signal and power conversion in various smart sensor applications. The ability to process low input voltage levels, for example, from vibrational energy harvesters is a major challenge with existing passive rectifiers in printed electronics, stemming mainly from the built-in potential of the diode's p-njunction. To address this problem, in this work, we design, fabricate, and characterize an inkjet-printed full-wave rectifier using diode-connected electrolyte-gated thin-film transistors (EGTs). Using both experimental and simulation approaches, we investigate how the rectifier can benefit from the near-zero threshold voltage of transistors, which can be enabled by proper channel geometry setting in EGT technology. The presented circuit can be operated at 1-V input voltage, featuring a remarkably small voltage loss of 140 mV and a cutoff frequency of ~300 Hz. Below the cutoff frequency, more than 2.6-μW dc power is obtained over the load resistances ranging from 5 to 20 kQ. Furthermore, experiments show that the circuit can work with an input amplitude down to 500 mV. This feature makes the presented design highly suitable for a variety of energy-harvesting applications.

In this study, a facile method to fabricate a cohesive ion‐gel based gate insulator for electrolyte‐gated transistors is introduced. The adhesive and flexible ion‐gel can be laminated easily on the semiconducting channel and electrode manually by hand. The ion‐gel is synthesized by a straightforward technique without complex procedures and shows a remarkable ionic conductivity of 4.8 mS cm−1 at room temperature. When used as a gate insulator in electrolyte‐gated transistors (EGTs), an on/off current ratio of 2.24×104 and a subthreshold swing of 117 mV dec−1 can be achieved. This performance is roughly equivalent to that of ink drop‐casted ion‐gels in electrolyte‐gated transistors, indicating that the film‐attachment method might represent a valuable alternative to ink drop‐casting for the fabrication of gate insulators.

Printed electronics (PE) enables disruptive applications in wearables, smart sensors, and healthcare since it provides mechanical flexibility, low cost, and on-demand fabrication. The progress in PE raises trust issues in the supply chain and vulnerability to reverse engineering (RE) attacks. Recently, RE attacks on PE circuits have been successfully performed, pointing out the need for countermeasures against RE, such as camouflaging. In this article, we propose a printed camouflaged logic cell that can be inserted into PE circuits to thwart RE. The proposed cell is based on three components achieved by changing the fabrication process that exploits the additive manufacturing feature of PE. These components are optically look-alike, while their electrical behaviors are different, functioning as a transistor, short, and open. The properties of the proposed cell and standard PE cells are compared in terms of voltage swing, delay, power consumption, and area. Moreover, the proposed camouflaged cell is fabricated and characterized to prove its functionality. Furthermore, numerous camouflaged components are fabricated, and their (in)distinguishability is assessed to validate their optical similarities based on the recent RE attacks on PE. The results show that the proposed cell is a promising candidate to be utilized in camouflaging PE circuits with negligible overhead.

Electrolyte-gated thin-film transistors (EGTs) with indium oxide channel, and expected lifetime of three months, enable low-voltage operation (~1 V) in the field of printed electronics (PEs). The channel width of our printed EGTs is varied between 200 and 1000 μm, whereas a channel length between 10 and 100 μm is used. Due to the lack of uniform performance p-type metal oxide semiconductors, n-type EGTs and passive elements are used to design circuits. For logic gates, transistor-resistor logic has been employed so far, but depletion and enhancement-mode EGTs in a transistor-transistor logic boost the circuit performance in terms of delay and signal swing. In this article, the threshold voltage of the EGT, which determines the operation mode, is tuned through sizing of the EGTs channel geometry. The feasibility of both transistor operation modes is demonstrated for logic gates and ring oscillators. An inverter operating at a supply voltage of 1 V shows a maximum gain of 9.6 and a propagation delay time of 0.7 ms, which represents an improvement of ~ 2x for the gain and oscillation frequency, in comparison with the resistor-transistor logic design. Moreover, the power consumption is reduced by 6x.

Printed Electronics technology is a key-enabler for smart sensors, soft robotics, and wearables. The inkjet printed electrolyte-gated field effect transistor (EGFET) technology is a promising candidate for such applications due to its low-power operation, high field-effect mobility, and on-demand fabrication. Unlike conventional silicon-based technologies, inkjet printed electronics technology is an additive manufacturing process where multiple layers are printed on top of each other to realize functional devices such as transistors and their interconnections. Due to the additive manufacturing process, the technology has limited routing layers. For routing of complex circuits, insulating crossovers are printed at the intersection of routing paths to isolate them. The crossover can alter the electrical properties of a circuit based on specific location on a routing path. In this work, we propose a crossover-aware placement and routing (COPnR) methodology for inkjet-printed circuits by integrating the crossover constraints in our design framework. Our proposed placement methodology is based on a state-of-the-art evolutionary algorithm while the routing optimization is done using a genetic algorithm. The proposed methodology is compared with the industrial standard placement and routing (PnR) tools. On average, the proposed methodology has 38% fewer crossovers and 94% fewer failing paths compared to the industrial PnR tools applied to printed circuit designs.

Hybrid systems, unifying printed electronics with silicon‐based technology, can be seen as a driving force for future sensor development. Especially interesting are sensing elements based on printed devices in combination with silicon‐based high‐performance electronics for data acquisition and communication. In this work, a hybrid system integrating a solution‐processed organic photodiode in a silicon‐based system environment, which enables flexible device measurement and application‐driven development, is presented. For performance evaluation of the integrated organic photodiode, the measurements are compared to a silicon‐based counterpart. Therefore, the steady state response of the hybrid system is presented. Promising application scenarios are described, where a solution‐processed organic photodiode is fully integrated in a silicon system.

Electrolyte-gated transistors (EGTs) represent an interesting alternative to conventional dielectric-gating to reduce the required high supply voltage for printed electronic applications. Here, a type of ink-jet printable ion-gel is introduced and optimized to fabricate a chemically crosslinked ion-gel by self-assembled gelation, without additional crosslinking processes, e.g., UV-curing. For the self-assembled gelation, poly(vinyl alcohol) and poly(ethylene-alt-maleic anhydride) are used as the polymer backbone and chemical crosslinker, respectively, and 1-ethyl-3-methylimidazolium trifluoromethanesulfonate ([EMIM][OTf]) is utilized as an ionic species to ensure ionic conductivity. The as-synthesized ion-gel exhibits an ionic conductivity of ≈5 mS cm−1 and an effective capacitance of 5.4 µF cm−2 at 1 Hz. The ion-gel is successfully employed in EGTs with an indium oxide (In2O3) channel, which shows on/off-ratios of up to 1.3 × 106 and a subthreshold swing of 80.62 mV dec−1.

Printed electronics can benefit from the deployment of electrolytesas gate insulators,which enables a high gate capacitance per unit area (1–10 μFcm−2) due to the formation of electrical double layers (EDLs). Consequently, electrolyte-gated field-effect transistors (EGFETs) attain high-charge carrier densities already in the subvoltage regime, allowing for low-voltage operation of circuits and systems. This article presents a systematic study of lumped terminal capacitances of printed electrolyte-gated transistors under various dc bias conditions. We perform voltage-dependent impedancemeasurements and separate extrinsic components from the lumped terminal capacitance. The proposed Meyer-like capacitance model, which also accounts for the nonquasi-static (NQS) effect, agrees well with experimental data. Finally, to verify the model, we implement it in Verilog-A and simulate the transient response of an inverter and a ring oscillator circuit. Simulation results are in good agreement with the measurement data of fabricated devices.