Refine
Document Type
- Article (reviewed) (23)
- Conference Proceeding (10)
- Article (unreviewed) (1)
Conference Type
- Konferenzartikel (10)
Language
- English (34)
Is part of the Bibliography
- yes (34)
Keywords
- printed electronics (4)
- Computer science (1)
- Electrical and electronic engineering (1)
- Electrolyte-gated transistors (1)
- Feldeffekt (1)
- Halbleiter (1)
- Internet of Things (1)
- IoT security (1)
- Transistor (1)
- Transistortechnologie (1)
- analog physical unclonable function system (1)
- copper oxide (1)
- crossbar (1)
- diode modeling (1)
- electrolyte-gated transistors (1)
- fingerprinting (1)
- hybrid systems (1)
- identification (1)
- indium oxide (1)
- metal oxide transistor (1)
- neural networks (1)
- nickel oxide (1)
- oxide electronics (1)
- oxide semiconductors (1)
- physically unclonable function (PUF) (1)
- pn-diode (1)
- security keys (1)
- stochastic computing (1)
- transistor model (1)
Institute
Open Access
- Closed Access (23)
- Open Access (5)
- Bronze (1)
- Closed (1)
Amorphous In-Ga-Zn-O (IGZO) is a high-mobility semiconductor employed in modern thin-film transistors for displays and it is considered as a promising material for Schottky diode-based rectifiers. Properties of the electronic components based on IGZO strongly depend on the manufacturing parameters such as the oxygen partial pressure during IGZO sputtering and post-deposition thermal annealing. In this study, we investigate the combined effect of sputtering conditions of amorphous IGZO (In:Ga:Zn=1:1:1) and post-deposition thermal annealing on the properties of vertical thin-film Pt-IGZO-Cu Schottky diodes, and evaluated the applicability of the fabricated Schottky diodes for low-frequency half-wave rectifier circuits. The change of the oxygen content in the gas mixture from 1.64% to 6.25%, and post-deposition annealing is shown to increase the current rectification ratio from 10 5 to 10 7 at ±1 V, Schottky barrier height from 0.64 eV to 0.75 eV, and the ideality factor from 1.11 to 1.39. Half-wave rectifier circuits based on the fabricated Schottky diodes were simulated using parameters extracted from measured current-voltage and capacitance-voltage characteristics. The half-wave rectifier circuits were realized at 100 kHz and 300 kHz on as-fabricated Schottky diodes with active area of 200 μm × 200 μm, which is relevant for the near-field communication (125 kHz - 134 kHz), and provided the output voltage amplitude of 0.87 V for 2 V supply voltage. The simulation results matched with the measurement data, verifying the model accuracy for circuit level simulation.