Open Access

Amorphous In-Ga-Zn-O (IGZO) is a high-mobility semiconductor employed in modern thin-film transistors for displays and it is considered as a promising material for Schottky diode-based rectifiers. Properties of the electronic components based on IGZO strongly depend on the manufacturing parameters such as the oxygen partial pressure during IGZO sputtering and post-deposition thermal annealing. In this study, we investigate the combined effect of sputtering conditions of amorphous IGZO (In:Ga:Zn=1:1:1) and post-deposition thermal annealing on the properties of vertical thin-film Pt-IGZO-Cu Schottky diodes, and evaluated the applicability of the fabricated Schottky diodes for low-frequency half-wave rectifier circuits. The change of the oxygen content in the gas mixture from 1.64% to 6.25%, and post-deposition annealing is shown to increase the current rectification ratio from 10 5 to 10 7 at ±1 V, Schottky barrier height from 0.64 eV to 0.75 eV, and the ideality factor from 1.11 to 1.39. Half-wave rectifier circuits based on the fabricated Schottky diodes were simulated using parameters extracted from measured current-voltage and capacitance-voltage characteristics. The half-wave rectifier circuits were realized at 100 kHz and 300 kHz on as-fabricated Schottky diodes with active area of 200 μm × 200 μm, which is relevant for the near-field communication (125 kHz - 134 kHz), and provided the output voltage amplitude of 0.87 V for 2 V supply voltage. The simulation results matched with the measurement data, verifying the model accuracy for circuit level simulation.

Electrolyte-gated transistors (EGTs) represent an interesting alternative to conventional dielectric-gating to reduce the required high supply voltage for printed electronic applications. Here, a type of ink-jet printable ion-gel is introduced and optimized to fabricate a chemically crosslinked ion-gel by self-assembled gelation, without additional crosslinking processes, e.g., UV-curing. For the self-assembled gelation, poly(vinyl alcohol) and poly(ethylene-alt-maleic anhydride) are used as the polymer backbone and chemical crosslinker, respectively, and 1-ethyl-3-methylimidazolium trifluoromethanesulfonate ([EMIM][OTf]) is utilized as an ionic species to ensure ionic conductivity. The as-synthesized ion-gel exhibits an ionic conductivity of ≈5 mS cm−1 and an effective capacitance of 5.4 µF cm−2 at 1 Hz. The ion-gel is successfully employed in EGTs with an indium oxide (In2O3) channel, which shows on/off-ratios of up to 1.3 × 106 and a subthreshold swing of 80.62 mV dec−1.

Printed electrolyte-gated oxide electronics is an emerging electronic technology in the low voltage regime (≤1 V). Whereas in the past mainly dielectrics have been used for gating the transistors, many recent approaches employ the advantages of solution processable, solid polymer electrolytes, or ion gels that provide high gate capacitances produced by a Helmholtz double layer, allowing for low-voltage operation. Herein, with special focus on work performed at KIT recent advances in building electronic circuits based on indium oxide, n-type electrolyte-gated field-effect transistors (EGFETs) are reviewed. When integrated into ring oscillator circuits a digital performance ranging from 250 Hz at 1 V up to 1 kHz is achieved. Sequential circuits such as memory cells are also demonstrated. More complex circuits are feasible but remain challenging also because of the high variability of the printed devices. However, the device inherent variability can be even exploited in security circuits such as physically unclonable functions (PUFs), which output a reliable and unique, device specific, digital response signal. As an overall advantage of the technology all the presented circuits can operate at very low supply voltages (0.6 V), which is crucial for low-power printed electronics applications.

The manufacturing of conventional electronics has become a highly complicated process, which requires intensive investment. In this context, printed electronics keeps attracting attention from both academia and industry. The primary reason is the simplification of the manufacturing process via additive printing technology such as ink-jet printing. Consequently, advantages are realized such as on-demand fabrication, minimal material waste and versatile choice of substrate materials. Central to the development of printed electronic circuits are printed transistors. Recently, metal oxide semiconductors such as indium oxide have become promising materials for the fabrication of printed transistors due to their high charge mobility. Furthermore, electrolyte-gating also provides benefits such as the low-voltage operation in sub-1 V regime due to the large gate capacitance provided by electrical double layers. This opens new possibilities to fabricate printed devices and circuits for niche applications. To facilitate the design and fabrication of printed circuits, the development of compact models is necessary. However, most of the current works have focused on the study of the static behavior of transistors, while the in-depth understanding of other characteristics such as the dynamic or noise behavior is missing. To this end, the purpose of this work is the comprehensive study on capacitance and noise properties of inkjet-printed electrolyte-gated thin-film transistors (EGT) based on indium oxide semiconductors. Proper modeling approaches are also proposed to capture accurately the electrical behaviour, which can be further utilized to enable advanced analysis of digital, analog and mixed-signal circuits. In this work, the capacitance of EGTs is characterized using voltage-dependent impedance spectroscopy. Intrinsic and extrinsic effects are carefully separated by using de-embedding test structures. Also, a dedicated equivalent circuit model is established to offer accurate simulations of the measured frequency response of the gate impedance. Based on that, it is revealed that top-gated EGTs have the potential to reach operation frequency in the kHz regime with proper optimizations of materials and printing process. Furthermore, a Meyer-like model is proposed to accurately capture the capacitance-voltage characteristics of the lumped terminal capacitance. Both parasitic and nonquasi-static effects are considered. This further enables the AC and transient analysis of complex circuits in circuit simulators. Following, the study of noise properties in the field of printed electronics is conducted. Low-frequency noise of EGTs is characterized using a reliable experimental setup. By examining measured noise spectra of the drain current at various gate voltages, the number fluctuation with correlated mobility fluctuation has been determined as the primary noise mechanism. Based on that, normalized flat-band voltage noise can be determined as the key performance metrics, which is only 1.08 × 10−7 V^2 µm^2, significantly lower in comparison with other thin-film technologies, which are based on dielectric gating and semiconductors such as IZO and IGZO. A plausible reason could be the large gate capacitance offered by the electrical double layers. This renders EGT technology useful for low-noise and sensitive applications such as sensor periphery circuits. Last but not least, various circuit designs based on EGT technology are proposed, including basic digital circuits such as inverters and ring oscillators. Their performance metrics such as the propagation delay and power consumption are extensively characterized. Also, the first design of a printed full-wave rectifier is presented by using diode-connected EGTs, which features near-zero threshold voltage. As a consequence, the presented rectifier can effectively process input voltage with a small amplitude of 100 mV and a cut-off frequency of 300 Hz, which is particularly attractive for the application domain of energy harvesting. Additionally, the previously established capacitance models are verified on those circuits, which provide a satisfactory agreement between the simulation and measurement data.