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Modern society is more than ever striving for digital connectivity -- everywhere and at any time, giving rise to megatrends such as the Internet of Things (IoT). Already today, 'things' communicate and interact autonomously with each other and are managed in networks. In the future, people, data, and things will be interlinked, which is also referred to as the Internet of Everything (IoE). Billions of devices will be ubiquitously present in our everyday environment and are being connected over the Internet.
As an emerging technology, printed electronics (PE) is a key enabler for the IoE offering novel device types with free form factors, new materials, and a wide range of substrates that can be flexible, transparent, as well as biodegradable. Furthermore, PE enables new degrees of freedom in circuit customizability, cost-efficiency as well as large-area fabrication at the point of use.
These unique features of PE complement conventional silicon-based technologies. Additive manufacturing processes enable the realization of many envisioned applications such as smart objects, flexible displays, wearables in health care, green electronics, to name but a few.
From the perspective of the IoE, interconnecting billions of heterogeneous devices and systems is one of the major challenges to be solved. Complex high-performance devices interact with highly specialized lightweight electronic devices, such as e.g. smartphones and smart sensors. Data is often measured, stored, and shared continuously with neighboring devices or in the cloud. Thereby, the abundance of data being collected and processed raises privacy and security concerns.
Conventional cryptographic operations are typically based on deterministic algorithms requiring high circuit and system complexity, which makes them unsuitable for lightweight devices.
Many applications do exist, where strong cryptographic operations are not required, such as e.g. in device identification and authentication. Thereby, the security level mainly depends on the quality of the entropy source and the trustworthiness of the derived keys. Statistical properties such as the uniqueness of the keys are of great importance to precisely distinguish between single entities.
In the past decades, hardware-intrinsic security, particularly physically unclonable functions (PUFs), gained a lot of attraction to provide security features for IoT devices. PUFs use their inherent variations to derive device-specific unique identifiers, comparable to fingerprints in biometry.
The potentials of this technology include the use of a true source of randomness, on demand key derivation, as well as inherent key storage.
Combining these potentials with the unique features of PE technology opens up new opportunities to bring security to lightweight electronic devices and systems. Although PE is still far from being matured and from being as reliable as silicon technology, in this thesis we show that PE-based PUFs are promising candidates to provide key derivation suitable for device identification in the IoE.
Thereby, this thesis is primarily concerned with the development, investigation, and assessment of PE-based PUFs to provide security functionalities to resource constrained printed devices and systems.
As a first contribution of this thesis, we introduce the scalable PE-based Differential Circuit PUF (DiffC-PUF) design to provide secure keys to be used in security applications for resource constrained printed devices. The DiffC-PUF is designed as a hybrid system architecture incorporating silicon-based and inkjet-printed components. We develop an embedded PUF platform to enable large-scale characterization of silicon and printed PUF cores.
In the second contribution of this thesis, we fabricate silicon PUF cores based on discrete components and perform statistical tests under realistic operating conditions. A comprehensive experimental analysis on the PUF security metrics is carried out. The results show that the silicon-based DiffC-PUF exhibits nearly ideal values for the uniqueness and reliability metrics. Furthermore, the identification capabilities of the DiffC-PUF are investigated and it is shown that additional post-processing can further improve the quality of the identification system.
In the third contribution of this thesis, we firstly introduce an evaluation workflow to simulate PE-based DiffC-PUFs, also called hybrid PUFs. Hereof, we introduce a Python-based simulation environment to investigate the characteristics and variations of printed PUF cores based on Monte Carlo (MC) simulations. The simulation results show, that the security metrics to be expected from the fabricated devices are close to ideal at the best operating point.
Secondly, we employ fabricated printed PUF cores for statistical tests under varying operating conditions including variations in ambient temperature, relative humidity, and supply voltage. The evaluations of the uniqueness, bit aliasing, and uniformity metrics are in good agreement with the simulation results. The experimentally determined mean reliability value is relatively low, which can be explained by the missing passivation and encapsulation of the printed transistors. The investigation of the identification capabilities based on the raw PUF responses shows that the pure hybrid PUF is not suitable for cryptographic applications, but qualifies for device identification tasks.
The final contribution is to switch to the perspective of an attacker. To judge on the security capabilities of the hybrid PUF, a comprehensive security analysis in the manner of a cryptanalysis is performed. The analysis of the entropy of the hybrid PUF shows that its vulnerability against model-based attacks mainly depends on the selected challenge building method. Furthermore, an attack methodology is introduced to assess the performances of different mathematical cloning attacks on the basis of eavesdropped challenge-response pairs (CRPs). To clone the hybrid PUF, a sorting algorithm is introduced and compared with commonly used supervised machine learning (ML) classifiers including logistic regression (LR), random forest (RF), as well as multi-layer perceptron (MLP).
The results show that the hybrid PUF is vulnerable against model-based attacks. The sorting algorithm benefits from shorter training times compared to the ML algorithms. If the eavesdropped CRPs are erroneous, the ML algorithms outperform the sorting algorithm.
The manufacturing of conventional electronics has become a highly complicated process, which requires intensive investment. In this context, printed electronics keeps attracting attention from both academia and industry. The primary reason is the simplification of the manufacturing process via additive printing technology such as ink-jet printing. Consequently, advantages are realized such as on-demand fabrication, minimal material waste and versatile choice of substrate materials. Central to the development of printed electronic circuits are printed transistors. Recently, metal oxide semiconductors such as indium oxide have become promising materials for the fabrication of printed transistors due to their high charge mobility. Furthermore, electrolyte-gating also provides benefits such as the low-voltage operation in sub-1 V regime due to the large gate capacitance provided by electrical double layers. This opens new possibilities to fabricate printed devices and circuits for niche applications.
To facilitate the design and fabrication of printed circuits, the development of compact models is necessary. However, most of the current works have focused on the study of the static behavior of transistors, while the in-depth understanding of other characteristics such as the dynamic or noise behavior is missing. To this end, the purpose of this work is the comprehensive study on capacitance and noise properties of inkjet-printed electrolyte-gated thin-film transistors (EGT) based on indium oxide semiconductors. Proper modeling approaches are also proposed to capture accurately the electrical behaviour, which can be further utilized to enable advanced analysis of digital, analog and mixed-signal circuits.
In this work, the capacitance of EGTs is characterized using voltage-dependent impedance spectroscopy. Intrinsic and extrinsic effects are carefully separated by using de-embedding test structures. Also, a dedicated equivalent circuit model is established to offer accurate simulations of the measured frequency response of the gate impedance. Based on that, it is revealed that top-gated EGTs have the potential to reach operation frequency in the kHz regime with proper optimizations of materials and printing process. Furthermore, a Meyer-like model is proposed to accurately capture the capacitance-voltage characteristics of the lumped terminal capacitance. Both parasitic and nonquasi-static effects are considered. This further enables the AC and transient analysis of complex circuits in circuit simulators.
Following, the study of noise properties in the field of printed electronics is conducted. Low-frequency noise of EGTs is characterized using a reliable experimental setup. By examining measured noise spectra of the drain current at various gate voltages, the number fluctuation with correlated mobility fluctuation has been determined as the primary noise mechanism. Based on that, normalized flat-band voltage noise can be determined as the key performance metrics, which is only 1.08 × 10−7 V^2 µm^2, significantly lower in comparison with other thin-film technologies, which are based on dielectric gating and semiconductors such as IZO and IGZO. A plausible reason could be the large gate capacitance offered by the electrical double layers. This renders EGT technology useful for low-noise and sensitive applications such as sensor periphery circuits.
Last but not least, various circuit designs based on EGT technology are proposed, including basic digital circuits such as inverters and ring oscillators. Their performance metrics such as the propagation delay and power consumption are extensively characterized. Also, the first design of a printed full-wave rectifier is presented by using diode-connected EGTs, which features near-zero threshold voltage. As a consequence, the presented rectifier can effectively process input voltage with a small amplitude of 100 mV and a cut-off frequency of 300 Hz, which is particularly attractive for the application domain of energy harvesting. Additionally, the previously established capacitance models are verified on those circuits, which provide a satisfactory agreement between the simulation and measurement data.