The 20 most recently published documents
Vorgestellt wird ein Konzept zur biologischen Methanisierung von Wasserstoff direkt in Biogasreaktoren, mit dem durch Membranbegasung der Methangehalt des Biogases auf > 96 % erhöht werden kann. Essentiell zum Erreichen solch hoher Methanwerte sind die Einhaltung eines optimalen pH-Bereichs und die Vermeidung von H2-Akkumulation. Im Falle einer Limitierung der Methanbildungsrate durch den eigentlichen anaeroben Abbauprozess der Biomasse ist auch eine externe Zufuhr von CO2 zur weiteren Methanbildung denkbar. Das Verfahren soll weiter optimiert und in einem von der Deutschen Bundesstiftung Umwelt geförderten Projekt in der Biogasanlage einer regionalen Käserei in der Praxis getestet werden. Die hier angestrebte Kombination aus dezentraler Abfallverwertung und Eigenenergieerzeugung eines lebensmittelverarbeitenden Betriebs unter Einbindung in ein intelligentes Erneuerbare Energien - Konzept soll einen zusätzlichen Mehrwert liefern.
In the area of cloud computing, judging the fulfillment of service-level agreements on a technical level is gaining more and more importance. To support this we introduce privacy preserving set relations as inclusiveness and disjointness based ao Bloom filters. We propose to compose them in a slightly different way by applying a keyed hash function. Besides discussing the correctness of set relations, we analyze how this impacts the privacy of the sets content as well as providing privacy on the sets cardinality. Indeed, our solution proposes to bring another layer of privacy on the sizes. We are in particular interested how the overlapping bits of a Bloom filter impact the privacy level of our approach. We concretely apply our solution to a use case of cloud security audit on access control and present our results with real-world parameters.
This work discusses several use cases of post-mortem mobile device tracking in which privacy is required e.g. due to client-confidentiality agreements and sensibility of data from government agencies as well as mobile telecommunication providers. We argue that our proposed Bloomfilter based privacy approach is a valuable technical building block for the arising General Data Protection Regulation (GDPR) requirements in this area. In short, we apply a solution based on the Bloom filters data structure that allows a 3rd party to performsome privacy saving setrelations on a mobiletelco’s access logfile or other mobile access logfile from harvesting parties without revealing any other mobile users in the proximity of a mobile base station but still allowing to track perpetrators.
Finding clusters in high dimensional data is a challenging research problem. Subspace clustering algorithms aim to find clusters in all possible subspaces of the dataset, where a subspace is a subset of dimensions of the data. But the exponential increase in the number of subspaces with the dimensionality of data renders most of the algorithms inefficient as well as ineffective. Moreover, these algorithms have ingrained data dependency in the clustering process, which means that parallelization becomes difficult and inefficient. SUBSCALE is a recent subspace clustering algorithm which is scalable with the dimensions and contains independent processing steps which can be exploited through parallelism. In this paper, we aim to leverage the computational power of widely available multi-core processors to improve the runtime performance of the SUBSCALE algorithm. The experimental evaluation shows linear speedup. Moreover, we develop an approach using graphics processing units (GPUs) for fine-grained data parallelism to accelerate the computation further. First tests of the GPU implementation show very promising results.
In many application domains, in particular automotives, guaranteeing a very low failure rate is crucial to meet functional and safety standards. Especially, reliable operation of memory components such as SRAM cells is of essential importance. Due to aggressive technology downscaling, process and runtime variations significantly impact manufacturing yield as well as functionality. For this reason, a thorough memory failure rate assessment is imperative for correct circuit operation and yield improvement. In this regard, Monte Carlo simulations have been used as the conventional method to estimate the variability induced failure rate of memory components. However, Monte Carlo methods become infeasible when estimating rare events such as high-sigma failure rates. To this end, Importance Sampling methods have been proposed which reduce the number of required simulations substantially. However, existing methods still suffer from inaccuracies and high computational efforts, in particular for high-sigma problems. In this paper, we fill this gap by presenting an efficient mixture Importance Sampling approach based on Bayesian optimization, which deploys a surface model of the objective function to find the most probable failure points. Its advantages include constant complexity independent of the dimensions of design space, the potential to find the global extrema, and higher trustworthiness of the estimated failure rate by accurately exploring the design space. The approach is evaluated on a 6T-SRAM cell as well as a master-slave latch based on a 28nm FDSOI process. The results show an improvement in accuracy, resulting in up to 63× better accuracy in estimating failure rates compared to the best state-of-the-art solutions on a 28nm technology node.
Oxide semiconductors have the potential to increase the performance of inkjet printed microelectronic devices such as field-effect transistors (FETs), due to their high electron mobilities. Typical metal oxides are n-type semiconductors, while p-type oxides, although realizable, exhibit lower carriermobilities. Therefore, the circuit design based on oxide semiconductors is mostly in n-type logic only. Here we present an inkjet printed pn-diode based on p- and n-type oxide semiconductors.Copper oxide or nickel oxide is used as p-typesemiconductor whereas n-typesemiconductor is realized with indium oxide. Themeasurements show that the pn-diodes operate in the voltage window typical for printed electronics and the emission coefficient is 1.505 and 2.199 for the copper oxide based and nickel oxidebased pn-diode, respectively.Furthermore, a pn-diode model is developed and integrable into a circuit simulator.
Printed systems spark immense interest in industry, and for several parts such as solar cells or radio frequency identification antennas, printed products are already available on the market. This has led to intense research; however, printed field-effect transistors (FETs) and logics derived thereof still have not been sufficiently developed to be adapted by industry. Among others, one of the reasons for this is the lack of control of the threshold voltage during production. In this work, we show an approach to adjust the threshold voltage (Vth) in printed electrolyte-gated FETs (EGFETs) with high accuracy by doping indium-oxide semiconducting channels with chromium. Despite high doping concentrations achieved by a wet chemical process during precursor ink preparation, good on/off-ratios of more than five orders of magnitude could be demonstrated. The synthesis process is simple, inexpensive, and easily scalable and leads to depletion-mode EGFETs, which are fully functional at operation potentials below 2 V and allows us to increase Vth by approximately 0.5 V.
Development of Fully Printed Oxide Field-Effect Transistors using Graphene Passive Structures
(2019)
During the past decade to the present time, the topic of printed electronics has gained a lot of attention for their potential use in a number of practical applications, including biosensors, photovoltaic devices, RFIDs, flexible displays, large-area circuits, and so on. To fully realize printed electronic components and devices, effective techniques for the printing of passive structures and electrically and chemically compatible materials in the printed devices need to be developed first. The opportunity of using electrically conducting graphene inks will enable the integration of passive structures into active devices, as for example, printed electrolyte-gated transistors (EGTs). Accordingly, in this study, we present the parametric results obtained on fully printed electrolyte-gated transistors having graphene as the passive electrodes, an inorganic oxide semiconductor as the active channel, and a composite solid polymer electrolyte (CSPE) as the gate insulating material. This configuration offers high chemical and electrical stability while at the same time allowing EGT operation at low potentials, implying the distinct advantage of operation at low input voltages. The printed in-plane EGTs we developed exhibit excellent performance with device mobility up to 16 cm2 V–1 s–1, an ION/IOFF ratio of 105, and a subthreshold slope of 120 mV dec–1.
Printed electronics (PE) circuits have several advantages over silicon counterparts for the applications where mechanical flexibility, extremely low-cost, large area, and custom fabrication are required. The custom (personalized) fabrication is a key feature of this technology, enabling customization per application, even in small quantities due to low-cost printing compared with lithography. However, the personalized and on-demand fabrication, the non-standard circuit design, and the limited number of printing layers with larger geometries compared with traditional silicon chip manufacturing open doors for new and unique reverse engineering (RE) schemes for this technology. In this paper, we present a robust RE methodology based on supervised machine learning, starting from image acquisition all the way to netlist extraction. The results show that the proposed RE methodology can reverse engineer the PE circuits with very limited manual effort and is robust against non-standard circuit design, customized layouts, and high variations resulting from the inherent properties of PE manufacturing processes.
Printed electronics (PE) is a fast growing technology with promising applications in wearables, smart sensors and smart cards since it provides mechanical flexibility, low-cost, on-demand and customizable fabrication. To secure the operation of these applications, True Random Number Generators (TRNGs) are required to generate unpredictable bits for cryptographic functions and padding. However, since the additive fabrication process of PE circuits results in high intrinsic variation due to the random dispersion of the printed inks on the substrate, constructing a printed TRNG is challenging. In this paper, we exploit the additive customizable fabrication feature of inkjet printing to design a TRNG based on electrolyte-gated field effect transistors (EGFETs). The proposed memory-based TRNG circuit can operate at low voltages (≤ 1 V ), it is hence suitable for low-power applications. We also propose a flow which tunes the printed resistors of the TRNG circuit to mitigate the overall process variation of the TRNG so that the generated bits are mostly based on the random noise in the circuit, providing a true random behaviour. The results show that the overall process variation of the TRNGs is mitigated by 110 times, and the simulated TRNGs pass the National Institute of Standards and Technology Statistical Test Suite.
Embedded Analog Physical Unclonable Function System to Extract Reliable and Unique Security Keys
(2020)
Internet of Things (IoT) enabled devices have become more and more pervasive in our everyday lives. Examples include wearables transmitting and processing personal data and smart labels interacting with customers. Due to the sensitive data involved, these devices need to be protected against attackers. In this context, hardware-based security primitives such as Physical Unclonable Functions (PUFs) provide a powerful solution to secure interconnected devices. The main benefit of PUFs, in combination with traditional cryptographic methods, is that security keys are derived from the random intrinsic variations of the underlying core circuit. In this work, we present a holistic analog-based PUF evaluation platform, enabling direct access to a scalable design that can be customized to fit the application requirements in terms of the number of required keys and bit width. The proposed platform covers the full software and hardware implementations and allows for tracing the PUF response generation from the digital level back to the internal analog voltages that are directly involved in the response generation procedure. Our analysis is based on 30 fabricated PUF cores that we evaluated in terms of PUF security metrics and bit errors for various temperatures and biases. With an average reliability of 99.20% and a uniqueness of 48.84%, the proposed system shows values close to ideal.
Die Erfindung betrifft eine Vorrichtung zur biologischen Methanisierung von Kohlenstoffdioxid mittels methanogener Mikroorganismen durch Umsetzung von Wasserstoff und Kohlenstoffdioxid die Folgendes aufweist: (a) einen Reaktor; (b) ein in dem Reaktor bereitgestelltes Medium mit methanogenen Mikroorganismen; (c) eine Zuführeinrichtung zum Zuführen eines H2-enthaltenden Gases in das Medium; wobei (d) die Zuführeinrichtung eine Mehrzahl an Gasführungseinheiten umfasst, wobei jede der Gasführungseinheiten eine Mehrzahl an Begasungseinheiten aufweist, die jeweils eine Vielzahl an Auslassöffnungen zum Zuführen des H2-enthaltenden Gases in das Medium aufweist, wobei die Zuführeinrichtung derart ausgestaltet ist, dass das Zuführen des H2-enthaltenden Gases durch sukzessive Beaufschlagung der Gasführungseinheiten erfolgen kann. Weiterhin betrifft die Erfindung auch ein Verfahren zur biologischen Methanisierung von Kohlenstoffdioxid in einer Reaktorvorrichtung mittels methanogener Mikroorganismen als Teil eines in einem Reaktor bereitgestellten Mediums, dadurch gekennzeichnet, dass ein H2-enthaltendes Gas über eine Mehrzahl an Gasführungseinheiten dem Medium zugeführt wird, wobei jede der Gasführungseinheiten eine Mehrzahl an Begasungseinheiten aufweist, die jeweils eine Vielzahl an Auslassöffnungen aufweisen, wobei das Zuführen des H2-enthaltenden Gases durch sukzessive Beaufschlagung der Gasführungseinheiten erfolgt. Dem H2-enthaltenden Medium kann nach Bedarf Kohlenstoffdioxid beigemischt werden.
Die Erfindung betrifft eine Photovoltaik-Stromversorgungsvorrichtung, insbesondere vom öffentlichen Stromnetz unabhängige Photovoltaik-Stromversorgungsvorrichtung, mit einem positiven (204) und einem negativen (206) Lastanschluss für den Anschluss einer elektrischen Last, mit einer Mehrzahl von photovoltaischen Zellen (104) und einer wiederaufladbaren Batterie (5), welche wenigstens zwei in Serie geschaltete Batteriezellen (112) umfasst. Nach der Erfindung sind die photovoltaischen Zellen (104) zu einer der Anzahl der Batteriezellen (112) entsprechenden Anzahl von seriell verbundenen Teilstrings (108) verschaltet und jeder Teilstring (108) ist mit einem positiven Teilstringanschluss mit einem Pluspol und mit einem negativen Teilstringanschluss mit einem Minuspol einer zugeordneten Batteriezelle (112) oder mehreren zugeordneten parallel geschalteten Batteriezellen (112) verbunden. Dabei kann jeder Teilstring (108) zwischen dem positiven und negativen Teilstringanschluss eine maximale Leerlaufspannung erzeugen, die kleiner oder gleich einer vorgegebenen Ladeschlussspannung der zugeordneten Batteriezelle (112) oder der zugeordneten parallel geschalteten Batteriezellen (112) ist. Weiterhin betrifft die Erfindung eine Schaltungsanordnung zum Laden einer wiederaufladbaren Batterie, die zur Realisierung einer derartigen Photovoltaik-Stromversorgungsvorrichtung geeignet ist.
Printed Electronics is perceived to have a major impact in the fields of smart sensors, Internet of Things and wearables. Especially low power printed technologies such as electrolyte gated field effect transistors (EGFETs) using solution-processed inorganic materials and inkjet printing are very promising in such application domains. In this paper, we discuss a modeling approach to describe the variations of printed devices. Incorporating these models and design flows into our previously developed printed design system allows for robust circuit design. Additionally, we propose a reliability-aware routing solution for printed electronics technology based on the technology constraints in printing crossovers. The proposed methodology was validated on multiple benchmark circuits and can be easily integrated with the design automation tools-set.
Printed electrolyte-gated oxide electronics is an emerging electronic technology in the low voltage regime (≤1 V). Whereas in the past mainly dielectrics have been used for gating the transistors, many recent approaches employ the advantages of solution processable, solid polymer electrolytes, or ion gels that provide high gate capacitances produced by a Helmholtz double layer, allowing for low-voltage operation. Herein, with special focus on work performed at KIT recent advances in building electronic circuits based on indium oxide, n-type electrolyte-gated field-effect transistors (EGFETs) are reviewed. When integrated into ring oscillator circuits a digital performance ranging from 250 Hz at 1 V up to 1 kHz is achieved. Sequential circuits such as memory cells are also demonstrated. More complex circuits are feasible but remain challenging also because of the high variability of the printed devices. However, the device inherent variability can be even exploited in security circuits such as physically unclonable functions (PUFs), which output a reliable and unique, device specific, digital response signal. As an overall advantage of the technology all the presented circuits can operate at very low supply voltages (0.6 V), which is crucial for low-power printed electronics applications.
Electrolyte-gated, printed field-effect transistors exhibit high charge carrier densities in the channel and thus high on-currents at low operating voltages, allowing for the low-power operation of such devices. This behavior is due to the high area-specific capacitance of the device, in which the electrolyte takes the role of the dielectric layer of classical architectures. In this paper, we investigate intrinsic double-layer capacitances of ink-jet printed electrolyte-gated inorganic field-effect transistors in both in-plane and top-gate architectures by means of voltage-dependent impedance spectroscopy. By comparison with deembedding structures, we separate the intrinsic properties of the double-layer capacitance at the transistor channel from parasitic effects and deduce accurate estimates for the double-layer capacitance based on an equivalent circuit fitting. Based on these results, we have performed simulations of the electrolyte cutoff frequency as a function of electrolyte and gate resistances, showing that the top-gate architecture has the potential to reach the kilohertz regime with proper optimization of materials and printing process. Our findings additionally enable accurate modeling of the frequency-dependent capacitance of electrolyte/ion gel-gated devices as required in the small-signal analysis in the circuit simulation.
In the domain of printed electronics (PE), field-effect transistors (FETs) with an oxide semiconductor channel are very promising. In particular, the use of high gate-capacitance of the composite solid polymer electrolytes (CSPEs) as a gate-insulator ensures extremely low voltage requirements. Besides high gate capacitance, such CSPEs are proven to be easily printable, stable in air over wide temperature ranges, and possess high ion conductivity. These CSPEs can be sensitive to moisture, especially for high surface-to-volume ratio printed thin films. In this paper, we provide a comprehensive experimental study on the effect of humidity on CSPE-gated single transistors. At the circuit level, the performance of ring oscillators (ROs) has been compared for various humidity conditions. The experimental results of the electrolyte-gated FETs (EGFETs) demonstrate rather comparable currents between 30%-90% humidity levels. However, the shifted transistor parameters lead to a significant performance change of the RO frequency behavior. The study in this paper shows the need of an impermeable encapsulation for the CSPE-gated FETs to ensure identical performance at all humidity conditions.
Die Wörz´sche Heuristik
(2019)
Radio frequency identification (RFID) antennas are popular for high frequency (HF) RFID, energy transfer and near field communication (NFC) applications. Particularly for wireless measurement systems the RFID/NFC technology is a good option to implement a wireless communication interface. In this context, the design of corresponding reader and transmitter antennas plays a major role for achieving suitable transmission quality. This work proves the feasibility of the rapid prototyping of a RFID/NFC antenna, which is used for the wireless communication and energy harvesting at the required frequency of 13.56 MHz. A novel and low-cost direct ink writing (DIW) technology utilizing highly viscous silver nanoparticle ink is used for this process. This paper describes the development and analysis of low-cost printed flexible RFID/NFC antennas on cost-effective substrates for a microelectronic vital parameter measurement system. Furthermore, we compare the measured technical parameters with existing copper-based counterparts on a FR4 substrate.
Smart Home or Smart Building applications are a growing market. An increasing challenge is to design energy efficient Smart Home applications to achieve sustainable and green homes. Using the example of the development of an Indoor Smart Gardening system with wireless monitoring and automated watering this paper is discussing in particular the design issue of energy autonomous working sensors and actuators for home automation. Most important part of the presented Smart Gardening system is a 3D printed smart flower pot for single plants. The smart flower pot has integrated a water reservoir for automated plant irrigation and an electronic for monitoring important plant parameters and the water level of the water reservoir. Energy harvesting with solar cells enables energy autonomous working of the flower pot. A low-power wireless interface also integrated in the flowerpot and an external gateway based on a Raspberry Pi 3 enables wireless networking of multiple of those flower pots. The gateway is used for evaluating the plant parameters and as a user interface. Particularly the architecture of the energy autonomous wireless flower pot will be considered, because fully energy autonomous sensors and actuators for home automation could not be implemented without special concepts for the energy supply and the overall electronic.