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Printed systems spark immense interest in industry, and for several parts such as solar cells or radio frequency identification antennas, printed products are already available on the market. This has led to intense research; however, printed field-effect transistors (FETs) and logics derived thereof still have not been sufficiently developed to be adapted by industry. Among others, one of the reasons for this is the lack of control of the threshold voltage during production. In this work, we show an approach to adjust the threshold voltage (Vth) in printed electrolyte-gated FETs (EGFETs) with high accuracy by doping indium-oxide semiconducting channels with chromium. Despite high doping concentrations achieved by a wet chemical process during precursor ink preparation, good on/off-ratios of more than five orders of magnitude could be demonstrated. The synthesis process is simple, inexpensive, and easily scalable and leads to depletion-mode EGFETs, which are fully functional at operation potentials below 2 V and allows us to increase Vth by approximately 0.5 V.
Silicon (Si) has turned out to be a promising active material for next‐generation lithium‐ion battery anodes. Nevertheless, the issues known from Si as electrode material (pulverization effects, volume change etc.) are impeding the development of Si anodes to reach market maturity. In this study, we are investigating a possible application of Si anodes in low‐power printed electronic applications. Tailored Si inks are produced and the impact of carbon coating on the printability and their electrochemical behavior as printed Si anodes is investigated. The printed Si anodes contain active material loadings that are practical for powering printed electronic devices, like electrolyte gated transistors, and are able to show high capacity retentions. A capacity of 1754 mAh/gSi is achieved for a printed Si anode after 100 cycles. Additionally, the direct applicability of the printed Si anodes is shown by successfully powering an ink‐jet printed transistor.
Emerging applications in soft robotics, wearables, smart consumer products or IoT-devices benefit from soft materials, flexible substrates in conjunction with electronic functionality. Due to high production costs and conformity restrictions, rigid silicon technologies do not meet application requirements in these new domains. However, whenever signal processing becomes too comprehensive, silicon technology must be used for the high-performance computing unit. At the same time, designing everything in flexible or printed electronics using conventional digital logic is not feasible yet due to the limitations of printed technologies in terms of performance, power and integration density. We propose to rather use the strengths of neuromorphic computing architectures consisting in their homogeneous topologies, few building blocks and analog signal processing to be mapped to an inkjet-printed hardware architecture. It has remained a challenge to demonstrate non-linear elements besides weighted aggregation. We demonstrate in this work printed hardware building blocks such as inverter-based comprehensive weight representation and resistive crossbars as well as printed transistor-based activation functions. In addition, we present a learning algorithm developed to train the proposed printed NCS architecture based on specific requirements and constraints of the technology.
Printed electrolyte-gated oxide electronics is an emerging electronic technology in the low voltage regime (≤1 V). Whereas in the past mainly dielectrics have been used for gating the transistors, many recent approaches employ the advantages of solution processable, solid polymer electrolytes, or ion gels that provide high gate capacitances produced by a Helmholtz double layer, allowing for low-voltage operation. Herein, with special focus on work performed at KIT recent advances in building electronic circuits based on indium oxide, n-type electrolyte-gated field-effect transistors (EGFETs) are reviewed. When integrated into ring oscillator circuits a digital performance ranging from 250 Hz at 1 V up to 1 kHz is achieved. Sequential circuits such as memory cells are also demonstrated. More complex circuits are feasible but remain challenging also because of the high variability of the printed devices. However, the device inherent variability can be even exploited in security circuits such as physically unclonable functions (PUFs), which output a reliable and unique, device specific, digital response signal. As an overall advantage of the technology all the presented circuits can operate at very low supply voltages (0.6 V), which is crucial for low-power printed electronics applications.
Electrolyte-gated transistors (EGTs) represent an interesting alternative to conventional dielectric-gating to reduce the required high supply voltage for printed electronic applications. Here, a type of ink-jet printable ion-gel is introduced and optimized to fabricate a chemically crosslinked ion-gel by self-assembled gelation, without additional crosslinking processes, e.g., UV-curing. For the self-assembled gelation, poly(vinyl alcohol) and poly(ethylene-alt-maleic anhydride) are used as the polymer backbone and chemical crosslinker, respectively, and 1-ethyl-3-methylimidazolium trifluoromethanesulfonate ([EMIM][OTf]) is utilized as an ionic species to ensure ionic conductivity. The as-synthesized ion-gel exhibits an ionic conductivity of ≈5 mS cm−1 and an effective capacitance of 5.4 µF cm−2 at 1 Hz. The ion-gel is successfully employed in EGTs with an indium oxide (In2O3) channel, which shows on/off-ratios of up to 1.3 × 106 and a subthreshold swing of 80.62 mV dec−1.
Effective medium theories (EMT) are powerful tools to calculate sample averaged thermoelectric material properties of composite materials. However, averaging over the heterogeneous spatial distribution of the phases can lead to incorrect estimates of the thermoelectric transport properties and the figure of merit ZT in compositions close to the percolation threshold. This is particularly true when the phases’ electronic properties are rather distinct leading to pronounced percolation effects. The authors propose an alternative model to calculate the thermoelectric properties of multi‐phased materials that are based on an expanded nodal analysis of random resistor networks (RRN). This method conserves the information about the morphology of the individual phases, allowing the study of the current paths through the phases and the influence of heterogeneous charge transport and cluster formation on the effective material properties of the composite. The authors show that in composites with strongly differing phases close to the percolation threshold the thermoelectric properties and the ZT value are always dominated exclusively by one phase or the other and never by an average of both. For these compositions, the individual samples display properties vastly different from EMT predictions and can be exploited for an increased thermoelectric performance.
Hybrid low-voltage physical unclonable function based on inkjet-printed metal-oxide transistors
(2020)
Modern society is striving for digital connectivity that demands information security. As an emerging technology, printed electronics is a key enabler for novel device types with free form factors, customizability, and the potential for large-area fabrication while being seamlessly integrated into our everyday environment. At present, information security is mainly based on software algorithms that use pseudo random numbers. In this regard, hardware-intrinsic security primitives, such as physical unclonable functions, are very promising to provide inherent security features comparable to biometrical data. Device-specific, random intrinsic variations are exploited to generate unique secure identifiers. Here, we introduce a hybrid physical unclonable function, combining silicon and printed electronics technologies, based on metal oxide thin film devices. Our system exploits the inherent randomness of printed materials due to surface roughness, film morphology and the resulting electrical characteristics. The security primitive provides high intrinsic variation, is non-volatile, scalable and exhibits nearly ideal uniqueness.
A versatile liquid metal (LM) printing process enabling the fabrication of various fully printed devices such as intra- and interconnect wires, resistors, diodes, transistors, and basic circuit elements such as inverters which are process compatible with other digital printing and thin film structuring methods for integration is presented. For this, a glass capillary-based direct-write method for printing LMs such as eutectic gallium alloys, exploring the potential for fully printed LM-enabled devices is demonstrated. Examples for successful device fabrication include resistors, p–n diodes, and field effect transistors. The device functionality and easiness of one integrated fabrication flow shows that the potential of LM printing is far exceeding the use of interconnecting conventional electronic devices in printed electronics.
Fully Printed Inverters using Metal‐Oxide Semiconductor and Graphene Passives on Flexible Substrates
(2020)
Printed and flexible metal‐oxide transistor technology has recently demonstrated great promise due to its high performance and robust mechanical stability. Herein, fully printed inverter structures using electrolyte‐gated oxide transistors on a flexible polyimide (PI) substrate are discussed in detail. Conductive graphene ink is printed as the passive structures and interconnects. The additive printed transistors on PI substrates show an on/off ratio of 106 and show mobilities similar to the state‐of‐the‐art printed transistors on rigid substrates. Printed meander structures of graphene are used as pull‐up resistances in a transistor–resistor logic to create fully printed inverters. The printed and flexible inverters show a signal gain of 3.5 and a propagation delay of 30 ms. These printed inverters are able to withstand a tensile strain of 1.5% following more than 200 cycles of mechanical bending. The stability of the electrical direct current (DC) properties has been observed over a period of 5 weeks. These oxide transistor‐based fully printed inverters are relevant for digital printing methods which could be implemented into roll‐to‐roll processes.
Embedded Analog Physical Unclonable Function System to Extract Reliable and Unique Security Keys
(2020)
Internet of Things (IoT) enabled devices have become more and more pervasive in our everyday lives. Examples include wearables transmitting and processing personal data and smart labels interacting with customers. Due to the sensitive data involved, these devices need to be protected against attackers. In this context, hardware-based security primitives such as Physical Unclonable Functions (PUFs) provide a powerful solution to secure interconnected devices. The main benefit of PUFs, in combination with traditional cryptographic methods, is that security keys are derived from the random intrinsic variations of the underlying core circuit. In this work, we present a holistic analog-based PUF evaluation platform, enabling direct access to a scalable design that can be customized to fit the application requirements in terms of the number of required keys and bit width. The proposed platform covers the full software and hardware implementations and allows for tracing the PUF response generation from the digital level back to the internal analog voltages that are directly involved in the response generation procedure. Our analysis is based on 30 fabricated PUF cores that we evaluated in terms of PUF security metrics and bit errors for various temperatures and biases. With an average reliability of 99.20% and a uniqueness of 48.84%, the proposed system shows values close to ideal.