Refine
Year of publication
- 2016 (1)
Document Type
Conference Type
- Konferenzartikel (1)
Language
- English (1)
Has Fulltext
- yes (1)
Is part of the Bibliography
- yes (1)
Keywords
- Transistor (1)
Open Access
- Bronze (1) (remove)
High mobility, electrolyte-gated transistors (EGTs) show high DC performance at low voltages (< 2 V). To model those EGTs, we have used different models for the below and the above threshold regime with appropriate interpolation to ensure continuity and smoothness over all regimes. This empirical model matches very well with our measured results obtained by the electrical characterization of EGTs.