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Uncontrollable manufacturing variations in electrical hardware circuits can be exploited as Physical Unclonable Functions (PUFs). Herein, we present a Printed Electronics (PE)-based PUF system architecture. Our proposed Differential Circuit PUF (DiffC-PUF) is a hybrid system, combining silicon-based and PE-based electronic circuits. The novel approach of the DiffC-PUF architecture is to provide a specially designed real hardware system architecture, that enables the automatic readout of interchangeable printed DiffC-PUF core circuits. The silicon-based addressing and evaluation circuit supplies and controls the printed PUF core and ensures seamless integration into silicon-based smart systems. Major objectives of our work are interconnected applications for the Internet of Things (IoT).
Printed Electronics (PE) is a promising technology that provides mechanical flexibility and low-cost fabrication. These features make PE the key enabler for emerging applications, such as smart sensors, wearables, and Internet of Things (IoTs). Since these applications need secure communication and/or authentication, it is vital to utilize security primitives for cryptographic key and identification. Physical Unclonable Functions (PUF) have been adopted widely to provide the secure keys. In this work, we present a weak PUF based on Electrolyte-gated FETs using inorganic inkjet printed electronics. A comprehensive analysis framework including Monte Carlo simulations based on real device measurements is developed to evaluate the proposed PE-PUF. Moreover, a multi-bit PE-PUF design is proposed to optimize area usage. The analysis results show that the PE-PUF has ideal uniqueness, good reliability, and can operates at low voltage which is critical for low-power PE applications. In addition, the proposed multi-bit PE-PUF reduces the area usage around 30%.
Printed electronics offers certain technological advantages over its silicon based counterparts, such as mechanical flexibility, low process temperatures, maskless and additive manufacturing process, leading to extremely low cost manufacturing. However, to be exploited in applications such as smart sensors, Internet of Things and wearables, it is essential that the printed devices operate at low supply voltages. Electrolyte gated field effect transistors (EGFETs) using solution-processed inorganic materials which are fully printed using inkjet printers at low temperatures are very promising candidates to provide such solutions. In this paper, we discuss the technology, process, modeling, fabrication, and design aspect of circuits based on EGFETs. We show how the measurements performed in the lab can accurately be modeled in order to be integrated in the design automation tool flow in the form of a Process Design Kit (PDK). We also review some of the remaining challenges in this technology and discuss our future directions to address them.
High mobility, electrolyte-gated transistors (EGTs) show high DC performance at low voltages (< 2 V). To model those EGTs, we have used different models for the below and the above threshold regime with appropriate interpolation to ensure continuity and smoothness over all regimes. This empirical model matches very well with our measured results obtained by the electrical characterization of EGTs.
A new RFID/NFC (ISO 15693 standard) based inductively powered passive SoC (System on chip) for biomedical applications is presented here. The proposed SOC consists of an integrated 32 bit microcontroller, RFID/NFC frontend, sensor interface circuit, analog to digital converter and some peripherals such as timer, SPI interface and memory devices. An energy harvesting unit supplies the power required for the entire system for complete passive operation. The complete chip is realized on CMOS 0.18 μm technology with a chip area of 1.5 mm × 3.0 mm.